Lithium ion trapping mechanism of SiO(2) in LiCoO(2) based memristors

Pt/LiCoO(2)/SiO(2)/Si stacks with different SiO(2) thicknesses are fabricated and the influence of SiO(2) on memristive behavior is investigated. It is demonstrated that SiO(2) can serve as Li ion trapping layer benefiting device retention, and the thickness of SiO(2) must be controlled to avoid lar...

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Detalles Bibliográficos
Autores principales: Hu, Qi, Li, Runmiao, Zhang, Xinjiang, Gao, Qin, Wang, Mei, Shi, Hongliang, Xiao, Zhisong, Chu, Paul K., Huang, Anping
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6434038/
https://www.ncbi.nlm.nih.gov/pubmed/30911041
http://dx.doi.org/10.1038/s41598-019-41508-3
Descripción
Sumario:Pt/LiCoO(2)/SiO(2)/Si stacks with different SiO(2) thicknesses are fabricated and the influence of SiO(2) on memristive behavior is investigated. It is demonstrated that SiO(2) can serve as Li ion trapping layer benefiting device retention, and the thickness of SiO(2) must be controlled to avoid large SET voltage and state instability. Simulation model based on Nernst potential and diffusion potential is postulated for electromotive force in LiCoO(2) based memristors. The simulation results show that SiO(2) trapping layer decreases the total electromotive field of device and thereby prevents Li ions from migrating back to LiCoO(2). This model shows a good agreement with experimental data and reveals the Li ion trapping mechanism of SiO(2) in LiCoO(2) based memristors.

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