Lithium ion trapping mechanism of SiO(2) in LiCoO(2) based memristors

Pt/LiCoO(2)/SiO(2)/Si stacks with different SiO(2) thicknesses are fabricated and the influence of SiO(2) on memristive behavior is investigated. It is demonstrated that SiO(2) can serve as Li ion trapping layer benefiting device retention, and the thickness of SiO(2) must be controlled to avoid lar...

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Autores principales: Hu, Qi, Li, Runmiao, Zhang, Xinjiang, Gao, Qin, Wang, Mei, Shi, Hongliang, Xiao, Zhisong, Chu, Paul K., Huang, Anping
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6434038/
https://www.ncbi.nlm.nih.gov/pubmed/30911041
http://dx.doi.org/10.1038/s41598-019-41508-3
_version_ 1783406399480397824
author Hu, Qi
Li, Runmiao
Zhang, Xinjiang
Gao, Qin
Wang, Mei
Shi, Hongliang
Xiao, Zhisong
Chu, Paul K.
Huang, Anping
author_facet Hu, Qi
Li, Runmiao
Zhang, Xinjiang
Gao, Qin
Wang, Mei
Shi, Hongliang
Xiao, Zhisong
Chu, Paul K.
Huang, Anping
author_sort Hu, Qi
collection PubMed
description Pt/LiCoO(2)/SiO(2)/Si stacks with different SiO(2) thicknesses are fabricated and the influence of SiO(2) on memristive behavior is investigated. It is demonstrated that SiO(2) can serve as Li ion trapping layer benefiting device retention, and the thickness of SiO(2) must be controlled to avoid large SET voltage and state instability. Simulation model based on Nernst potential and diffusion potential is postulated for electromotive force in LiCoO(2) based memristors. The simulation results show that SiO(2) trapping layer decreases the total electromotive field of device and thereby prevents Li ions from migrating back to LiCoO(2). This model shows a good agreement with experimental data and reveals the Li ion trapping mechanism of SiO(2) in LiCoO(2) based memristors.
format Online
Article
Text
id pubmed-6434038
institution National Center for Biotechnology Information
language English
publishDate 2019
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-64340382019-04-02 Lithium ion trapping mechanism of SiO(2) in LiCoO(2) based memristors Hu, Qi Li, Runmiao Zhang, Xinjiang Gao, Qin Wang, Mei Shi, Hongliang Xiao, Zhisong Chu, Paul K. Huang, Anping Sci Rep Article Pt/LiCoO(2)/SiO(2)/Si stacks with different SiO(2) thicknesses are fabricated and the influence of SiO(2) on memristive behavior is investigated. It is demonstrated that SiO(2) can serve as Li ion trapping layer benefiting device retention, and the thickness of SiO(2) must be controlled to avoid large SET voltage and state instability. Simulation model based on Nernst potential and diffusion potential is postulated for electromotive force in LiCoO(2) based memristors. The simulation results show that SiO(2) trapping layer decreases the total electromotive field of device and thereby prevents Li ions from migrating back to LiCoO(2). This model shows a good agreement with experimental data and reveals the Li ion trapping mechanism of SiO(2) in LiCoO(2) based memristors. Nature Publishing Group UK 2019-03-25 /pmc/articles/PMC6434038/ /pubmed/30911041 http://dx.doi.org/10.1038/s41598-019-41508-3 Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Hu, Qi
Li, Runmiao
Zhang, Xinjiang
Gao, Qin
Wang, Mei
Shi, Hongliang
Xiao, Zhisong
Chu, Paul K.
Huang, Anping
Lithium ion trapping mechanism of SiO(2) in LiCoO(2) based memristors
title Lithium ion trapping mechanism of SiO(2) in LiCoO(2) based memristors
title_full Lithium ion trapping mechanism of SiO(2) in LiCoO(2) based memristors
title_fullStr Lithium ion trapping mechanism of SiO(2) in LiCoO(2) based memristors
title_full_unstemmed Lithium ion trapping mechanism of SiO(2) in LiCoO(2) based memristors
title_short Lithium ion trapping mechanism of SiO(2) in LiCoO(2) based memristors
title_sort lithium ion trapping mechanism of sio(2) in licoo(2) based memristors
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6434038/
https://www.ncbi.nlm.nih.gov/pubmed/30911041
http://dx.doi.org/10.1038/s41598-019-41508-3
work_keys_str_mv AT huqi lithiumiontrappingmechanismofsio2inlicoo2basedmemristors
AT lirunmiao lithiumiontrappingmechanismofsio2inlicoo2basedmemristors
AT zhangxinjiang lithiumiontrappingmechanismofsio2inlicoo2basedmemristors
AT gaoqin lithiumiontrappingmechanismofsio2inlicoo2basedmemristors
AT wangmei lithiumiontrappingmechanismofsio2inlicoo2basedmemristors
AT shihongliang lithiumiontrappingmechanismofsio2inlicoo2basedmemristors
AT xiaozhisong lithiumiontrappingmechanismofsio2inlicoo2basedmemristors
AT chupaulk lithiumiontrappingmechanismofsio2inlicoo2basedmemristors
AT huanganping lithiumiontrappingmechanismofsio2inlicoo2basedmemristors

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