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Band Anti-Crossing Model in Dilute-As GaNAs Alloys
The band structure of the dilute-As GaNAs material is explained by the hybridization of localized As-impurity states with the valance band structure of GaN. Our approach employs the use of Density Functional Theory (DFT) calculated band structures, along with experimental results, to determine the l...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6435752/ https://www.ncbi.nlm.nih.gov/pubmed/30914672 http://dx.doi.org/10.1038/s41598-019-41286-y |