A 4.8-μV(rms)-Noise CMOS-Microelectrode Array With Density-Scalable Active Readout Pixels via Disaggregated Differential Amplifier Implementation

We demonstrate a 4.8-μV(rms) noise microelectrode array (MEA) based on the complementary-metal-oxide-semiconductor active-pixel-sensors readout technique with disaggregated differential amplifier implementation. The circuit elements of the differential amplifier are divided into a readout pixel, a r...

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Detalles Bibliográficos
Autores principales: Ogi, Jun, Kato, Yuri, Nakashima, Yusaku, Ikeda, Kenji, Jingu, Motoko, Matoba, Yoshihisa, Kimizuka, Naohiko, Yamane, Chigusa, Maehara, Masataka, Kishimoto, Takuya, Hashimoto, Shigeki, Matsui, Eriko, Oike, Yusuke
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Frontiers Media S.A. 2019
Materias:
Neuroscience
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6437115/
https://www.ncbi.nlm.nih.gov/pubmed/30949022
http://dx.doi.org/10.3389/fnins.2019.00234
Descripción
Sumario:We demonstrate a 4.8-μV(rms) noise microelectrode array (MEA) based on the complementary-metal-oxide-semiconductor active-pixel-sensors readout technique with disaggregated differential amplifier implementation. The circuit elements of the differential amplifier are divided into a readout pixel, a reference pixel, and a column circuit. This disaggregation contributes to the small area of the readout pixel, which is less than 81 μm(2). We observed neuron signals around 100 μV with 432 electrodes in a fabricated prototype chip. The implementation has technological feasibility of up to 12-μm-pitch electrode density and 6,912 readout channels for high-spatial resolution mapping of neuron network activity.

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