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Modulation of Excited State Property Based on Benzo[a, c]phenazine Acceptor: Three Typical Excited States and Electroluminescence Performance

Throwing light upon the structure-property relationship of the excited state properties for next-generation fluorescent materials is crucial for the organic light emitting diode (OLED) field. Herein, we designed and synthesized three donor-acceptor (D-A) structure compounds based on a strong spin or...

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Detalles Bibliográficos
Autores principales: Zhou, Changjiang, Xiao, Shengbing, Wang, Man, Jiang, Wenzhe, Liu, Haichao, Zhang, Shitong, Yang, Bing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Frontiers Media S.A. 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6439465/
https://www.ncbi.nlm.nih.gov/pubmed/30968012
http://dx.doi.org/10.3389/fchem.2019.00141
Descripción
Sumario:Throwing light upon the structure-property relationship of the excited state properties for next-generation fluorescent materials is crucial for the organic light emitting diode (OLED) field. Herein, we designed and synthesized three donor-acceptor (D-A) structure compounds based on a strong spin orbit coupling (SOC) acceptor benzo[a, c]phenazine (DPPZ) to research on the three typical types of excited states, namely, the locally-excited (LE) dominated excited state (CZP-DPPZ), the hybridized local and charge-transfer (HLCT) state (TPA-DPPZ), and the charge-transfer (CT) dominated state with TADF characteristics (PXZ-DPPZ). A theoretical combined experimental research was adopted for the excited state properties and their regulation methods of the three compounds. Benefiting from the HLCT character, TPA-DPPZ achieves the best non-doped device performance with maximum brightness of 61,951 cd m(−2) and maximum external quantum efficiency of 3.42%, with both high photoluminescence quantum efficiency of 40.2% and high exciton utilization of 42.8%. Additionally, for the doped OLED, PXZ-DPPZ can achieve a max EQE of 9.35%, due to a suppressed triplet quenching and an enhanced SOC.