Fermi level tuning of Ag-doped Bi(2)Se(3) topological insulator

The temperature dependence of the resistivity (ρ) of Ag-doped Bi(2)Se(3) (Ag(x)Bi(2−x)Se(3)) shows insulating behavior above 35 K, but below 35 K, ρ suddenly decreases with decreasing temperature, in contrast to the metallic behavior for non-doped Bi(2)Se(3) at 1.5–300 K. This significant change in...

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Autores principales: Uesugi, Eri, Uchiyama, Takaki, Goto, Hidenori, Ota, Hiromi, Ueno, Teppei, Fujiwara, Hirokazu, Terashima, Kensei, Yokoya, Takayoshi, Matsui, Fumihiko, Akimitsu, Jun, Kobayashi, Kaya, Kubozono, Yoshihiro
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
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Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6440949/
https://www.ncbi.nlm.nih.gov/pubmed/30926890
http://dx.doi.org/10.1038/s41598-019-41906-7
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author Uesugi, Eri
Uchiyama, Takaki
Goto, Hidenori
Ota, Hiromi
Ueno, Teppei
Fujiwara, Hirokazu
Terashima, Kensei
Yokoya, Takayoshi
Matsui, Fumihiko
Akimitsu, Jun
Kobayashi, Kaya
Kubozono, Yoshihiro
author_facet Uesugi, Eri
Uchiyama, Takaki
Goto, Hidenori
Ota, Hiromi
Ueno, Teppei
Fujiwara, Hirokazu
Terashima, Kensei
Yokoya, Takayoshi
Matsui, Fumihiko
Akimitsu, Jun
Kobayashi, Kaya
Kubozono, Yoshihiro
author_sort Uesugi, Eri
collection PubMed
description The temperature dependence of the resistivity (ρ) of Ag-doped Bi(2)Se(3) (Ag(x)Bi(2−x)Se(3)) shows insulating behavior above 35 K, but below 35 K, ρ suddenly decreases with decreasing temperature, in contrast to the metallic behavior for non-doped Bi(2)Se(3) at 1.5–300 K. This significant change in transport properties from metallic behavior clearly shows that the Ag doping of Bi(2)Se(3) can effectively tune the Fermi level downward. The Hall effect measurement shows that carrier is still electron in Ag(x)Bi(2−x)Se(3) and the electron density changes with temperature to reasonably explain the transport properties. Furthermore, the positive gating of Ag(x)Bi(2−x)Se(3) provides metallic behavior that is similar to that of non-doped Bi(2)Se(3), indicating a successful upward tuning of the Fermi level.
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spelling pubmed-64409492019-04-04 Fermi level tuning of Ag-doped Bi(2)Se(3) topological insulator Uesugi, Eri Uchiyama, Takaki Goto, Hidenori Ota, Hiromi Ueno, Teppei Fujiwara, Hirokazu Terashima, Kensei Yokoya, Takayoshi Matsui, Fumihiko Akimitsu, Jun Kobayashi, Kaya Kubozono, Yoshihiro Sci Rep Article The temperature dependence of the resistivity (ρ) of Ag-doped Bi(2)Se(3) (Ag(x)Bi(2−x)Se(3)) shows insulating behavior above 35 K, but below 35 K, ρ suddenly decreases with decreasing temperature, in contrast to the metallic behavior for non-doped Bi(2)Se(3) at 1.5–300 K. This significant change in transport properties from metallic behavior clearly shows that the Ag doping of Bi(2)Se(3) can effectively tune the Fermi level downward. The Hall effect measurement shows that carrier is still electron in Ag(x)Bi(2−x)Se(3) and the electron density changes with temperature to reasonably explain the transport properties. Furthermore, the positive gating of Ag(x)Bi(2−x)Se(3) provides metallic behavior that is similar to that of non-doped Bi(2)Se(3), indicating a successful upward tuning of the Fermi level. Nature Publishing Group UK 2019-03-29 /pmc/articles/PMC6440949/ /pubmed/30926890 http://dx.doi.org/10.1038/s41598-019-41906-7 Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Uesugi, Eri
Uchiyama, Takaki
Goto, Hidenori
Ota, Hiromi
Ueno, Teppei
Fujiwara, Hirokazu
Terashima, Kensei
Yokoya, Takayoshi
Matsui, Fumihiko
Akimitsu, Jun
Kobayashi, Kaya
Kubozono, Yoshihiro
Fermi level tuning of Ag-doped Bi(2)Se(3) topological insulator
title Fermi level tuning of Ag-doped Bi(2)Se(3) topological insulator
title_full Fermi level tuning of Ag-doped Bi(2)Se(3) topological insulator
title_fullStr Fermi level tuning of Ag-doped Bi(2)Se(3) topological insulator
title_full_unstemmed Fermi level tuning of Ag-doped Bi(2)Se(3) topological insulator
title_short Fermi level tuning of Ag-doped Bi(2)Se(3) topological insulator
title_sort fermi level tuning of ag-doped bi(2)se(3) topological insulator
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6440949/
https://www.ncbi.nlm.nih.gov/pubmed/30926890
http://dx.doi.org/10.1038/s41598-019-41906-7
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