Cargando…
Fermi level tuning of Ag-doped Bi(2)Se(3) topological insulator
The temperature dependence of the resistivity (ρ) of Ag-doped Bi(2)Se(3) (Ag(x)Bi(2−x)Se(3)) shows insulating behavior above 35 K, but below 35 K, ρ suddenly decreases with decreasing temperature, in contrast to the metallic behavior for non-doped Bi(2)Se(3) at 1.5–300 K. This significant change in...
Autores principales: | Uesugi, Eri, Uchiyama, Takaki, Goto, Hidenori, Ota, Hiromi, Ueno, Teppei, Fujiwara, Hirokazu, Terashima, Kensei, Yokoya, Takayoshi, Matsui, Fumihiko, Akimitsu, Jun, Kobayashi, Kaya, Kubozono, Yoshihiro |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6440949/ https://www.ncbi.nlm.nih.gov/pubmed/30926890 http://dx.doi.org/10.1038/s41598-019-41906-7 |
Ejemplares similares
-
Semiconductor–metal transition in Bi(2)Se(3) caused by impurity doping
por: Uchiyama, Takaki, et al.
Publicado: (2023) -
Emergence of superconductivity in (NH(3))(y)M(x)MoSe(2) (M: Li, Na and K)
por: Miao, Xiao, et al.
Publicado: (2016) -
Fermi surface topology in a metallic phase of VO(2) thin films grown on TiO(2)(001) substrates
por: Muraoka, Yuji, et al.
Publicado: (2018) -
Electric double-layer capacitance between an ionic liquid and few-layer graphene
por: Uesugi, Eri, et al.
Publicado: (2013) -
Mixed-valence insulators with neutral Fermi surfaces
por: Chowdhury, Debanjan, et al.
Publicado: (2018)