Cargando…

Direct Vapor Growth of 2D Vertical Heterostructures with Tunable Band Alignments and Interfacial Charge Transfer Behaviors

2D vertical van der Waals (vdW) heterostructures with atomically sharp interfaces have attracted tremendous interest in 2D photonic and optoelectronic applications. Band alignment engineering in 2D heterostructures provides a perfect platform for tailoring interfacial charge transfer behaviors, from...

Descripción completa

Detalles Bibliográficos
Autores principales:	Zheng, Weihao, Zheng, Biyuan, Yan, Changlin, Liu, Ying, Sun, Xingxia, Qi, Zhaoyang, Yang, Tiefeng, Jiang, Ying, Huang, Wei, Fan, Peng, Jiang, Feng, Ji, Wei, Wang, Xiao, Pan, Anlian
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	John Wiley and Sons Inc. 2019
Materias:	Communications
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6446596/ https://www.ncbi.nlm.nih.gov/pubmed/30989032 http://dx.doi.org/10.1002/advs.201802204

Ejemplares similares

Interlayer exciton formation, relaxation, and transport in TMD van der Waals heterostructures
por: Jiang, Ying, et al.
Publicado: (2021)

Tunable two-dimensional interfacial coupling in molecular heterostructures
por: Xu, Beibei, et al.
Publicado: (2017)

Strain-Tunable Electronic Properties and Band Alignments in GaTe/C(2)N Heterostructure: a First-Principles Calculation
por: Li, Xiao-Huan, et al.
Publicado: (2018)

Author Correction: Tunable two-dimensional interfacial coupling in molecular heterostructures
por: Xu, Beibei, et al.
Publicado: (2017)

Type-II Band Alignment and Tunable Optical Absorption in MoSSe/InS van der Waals Heterostructure
por: Yuan, X. B., et al.
Publicado: (2022)

Van der Waals epitaxial growth and optoelectronics of large-scale WSe(2)/SnS(2) vertical bilayer p–n junctions
por: Yang, Tiefeng, et al.
Publicado: (2017)

Tunable Schottky Barrier and Interfacial Electronic Properties in Graphene/ZnSe Heterostructures
por: Xiao, Wenjun, et al.
Publicado: (2021)

Emergence of electric-field-tunable interfacial ferromagnetism in 2D antiferromagnet heterostructures
por: Cheng, Guanghui, et al.
Publicado: (2022)

Germanium/perovskite heterostructure for high-performance and broadband photodetector from visible to infrared telecommunication band
por: Hu, Wei, et al.
Publicado: (2019)

Gate-Tunable Spin Transport and Giant Electroresistance in Ferromagnetic Graphene Vertical Heterostructures
por: Myoung, Nojoon, et al.
Publicado: (2016)

Tunable Contact Types and Interfacial Electronic Properties in TaS(2)/MoS(2) and TaS(2)/WSe(2) Heterostructures
por: Zhu, Xiangjiu, et al.
Publicado: (2023)

Controllable Fabrication of Vertical Graphene with Tunable Growth Nature by Remote Plasma-Enhanced Chemical Vapor Deposition
por: Zhang, Tian-Tian, et al.
Publicado: (2023)

Tunable Vapor-Condensed Nanolenses
por: McLeod, Euan, et al.
Publicado: (2014)

Tunable electronic and optical properties of a BAs/As heterostructure by vertical strain and external electric field
por: Deng, X. Q., et al.
Publicado: (2021)

Tunable Goos-Hänchen Shift Surface Plasmon Resonance Sensor Based on Graphene-hBN Heterostructure
por: Liu, Zihao, et al.
Publicado: (2021)

Tunable Band Gap and Conductivity Type of ZnSe/Si Core-Shell Nanowire Heterostructures
por: Zeng, Yijie, et al.
Publicado: (2014)

A vertical WSe(2)–MoSe(2) p–n heterostructure with tunable gate rectification
por: Liu, Hailing, et al.
Publicado: (2018)

Selective Chemical Vapor Deposition Growth of WS(2)/MoS(2) Vertical and Lateral Heterostructures on Gold Foils
por: Wang, Zixuan, et al.
Publicado: (2022)

Room temperature near unity spin polarization in 2D Van der Waals heterostructures
por: Zhang, Danliang, et al.
Publicado: (2020)

Ambient Pressure Chemical Vapor Deposition of Flat and Vertically Aligned MoS(2) Nanosheets
por: Tummala, Pinaka Pani, et al.
Publicado: (2022)

Tunable spin-polarized band gap in Si(2)/NiI(2) vdW heterostructure
por: Duarte de Vargas, Douglas, et al.
Publicado: (2020)

Controllable Vapor Growth of Large-Area Aligned CdS(x)Se(1−x) Nanowires for Visible Range Integratable Photodetectors
por: Shoaib, Muhammad, et al.
Publicado: (2018)

Enhanced optoelectronic performances of vertically aligned hexagonal boron nitride nanowalls-nanocrystalline diamond heterostructures
por: Sankaran, Kamatchi Jothiramalingam, et al.
Publicado: (2016)

Correction: A vertical WSe(2)–MoSe(2) p–n heterostructure with tunable gate rectification
por: Liu, Hailiang, et al.
Publicado: (2018)

Van der Waals epitaxial growth and optoelectronics of a vertical MoS(2)/WSe(2) p–n junction
por: Xiao, Yu, et al.
Publicado: (2022)

Controlled alignment of supermoiré lattice in double-aligned graphene heterostructures
por: Hu, Junxiong, et al.
Publicado: (2023)

Distribution of Iron Nanoparticles in Arrays of Vertically Aligned Carbon Nanotubes Grown by Chemical Vapor Deposition
por: Okotrub, Alexander V., et al.
Publicado: (2022)

Electronic Properties of Tetraazaperopyrene Derivatives on Au(111): Energy-Level Alignment and Interfacial Band Formation
por: Stein, Arnulf, et al.
Publicado: (2021)

Tunable Interfacial Electronic Pd–Si Interaction Boosts Catalysis via Accelerating O(2) and H(2)O Activation
por: Dong, Tao, et al.
Publicado: (2023)

The Influences of H(2)Plasma Pretreatment on the Growth of Vertically Aligned Carbon Nanotubes by Microwave Plasma Chemical Vapor Deposition
por: Jian, Sheng-Rui, et al.
Publicado: (2008)

Tunable Band Alignment with Unperturbed Carrier Mobility of On-Surface Synthesized Organic Semiconducting Wires
por: Basagni, Andrea, et al.
Publicado: (2016)

Chemical Vapor Deposition of Monolayer Mo(1−x)W(x)S(2) Crystals with Tunable Band Gaps
por: Wang, Ziqian, et al.
Publicado: (2016)

Spin‐Orbit Torque in Van der Waals‐Layered Materials and Heterostructures
por: Tang, Wei, et al.
Publicado: (2021)

Chemical Vapor Deposition of Vertically Aligned Carbon Nanotube Arrays: Critical Effects of Oxide Buffer Layers
por: Li, Haohao, et al.
Publicado: (2019)

Interfacial Solar Steam/Vapor Generation for Heating and Cooling
por: Li, Xiuqiang, et al.
Publicado: (2022)

Interfacial Coupling and Modulation of van der Waals Heterostructures for Nanodevices
por: Zhao, Kun, et al.
Publicado: (2022)

Reversible Half Wave Rectifier Based on 2D InSe/GeSe Heterostructure with Near‐Broken Band Alignment
por: Yan, Yong, et al.
Publicado: (2021)

Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In(0.17)Al(0.83)N/GaN heterostructures
por: Wang, Jiaming, et al.
Publicado: (2014)

TiO(2)/BiVO(4) Nanowire Heterostructure Photoanodes Based on Type II Band Alignment
por: Resasco, Joaquin, et al.
Publicado: (2016)

Photoluminescence Enhancement by Band Alignment Engineering in MoS(2)/FePS(3) van der Waals Heterostructures
por: Ramos, Maria, et al.
Publicado: (2022)

Cannot write session to /tmp/vufind_sessions/sess_h466rjdpj7tt8ebh9rk6fuc17q