:Hydrogen Doping Oxide Transistors: Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors (Adv. Sci. 7/2019)

In article number 1801189, Chuan Liu and co‐workers present hydrogen doped IGZO thin‐film transistors induced by simple SIN(X) encapsulation which exhibits substantially enhanced current and stability. Combing photoelectron spectroscopy, potential mapping and simulation, the nonuniform carrier distr...

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Detalles Bibliográficos
Autores principales: Chen, Changdong, Yang, Bo‐Ru, Li, Gongtan, Zhou, Hang, Huang, Bolong, Wu, Qian, Zhan, Runze, Noh, Yong‐Young, Minari, Takeo, Zhang, Shengdong, Deng, Shaozhi, Sirringhaus, Henning, Liu, Chuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2019
Materias:
Frontispiece
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6446738/
http://dx.doi.org/10.1002/advs.201970040
Descripción
Sumario:In article number 1801189, Chuan Liu and co‐workers present hydrogen doped IGZO thin‐film transistors induced by simple SIN(X) encapsulation which exhibits substantially enhanced current and stability. Combing photoelectron spectroscopy, potential mapping and simulation, the nonuniform carrier distribution is revealed as the cause for the ultra‐high current and apparent device mobility, which is 40 times higher than the carrier mobility. [Image: see text]

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