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:Hydrogen Doping Oxide Transistors: Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors (Adv. Sci. 7/2019)
In article number 1801189, Chuan Liu and co‐workers present hydrogen doped IGZO thin‐film transistors induced by simple SIN(X) encapsulation which exhibits substantially enhanced current and stability. Combing photoelectron spectroscopy, potential mapping and simulation, the nonuniform carrier distr...
| Autores principales: | , , , , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
John Wiley and Sons Inc.
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6446738/ http://dx.doi.org/10.1002/advs.201970040 |
| _version_ | 1783408415558598656 |
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| author | Chen, Changdong Yang, Bo‐Ru Li, Gongtan Zhou, Hang Huang, Bolong Wu, Qian Zhan, Runze Noh, Yong‐Young Minari, Takeo Zhang, Shengdong Deng, Shaozhi Sirringhaus, Henning Liu, Chuan |
| author_facet | Chen, Changdong Yang, Bo‐Ru Li, Gongtan Zhou, Hang Huang, Bolong Wu, Qian Zhan, Runze Noh, Yong‐Young Minari, Takeo Zhang, Shengdong Deng, Shaozhi Sirringhaus, Henning Liu, Chuan |
| author_sort | Chen, Changdong |
| collection | PubMed |
| description | In article number 1801189, Chuan Liu and co‐workers present hydrogen doped IGZO thin‐film transistors induced by simple SIN(X) encapsulation which exhibits substantially enhanced current and stability. Combing photoelectron spectroscopy, potential mapping and simulation, the nonuniform carrier distribution is revealed as the cause for the ultra‐high current and apparent device mobility, which is 40 times higher than the carrier mobility. [Image: see text] |
| format | Online Article Text |
| id | pubmed-6446738 |
| institution | National Center for Biotechnology Information |
| language | English |
| publishDate | 2019 |
| publisher | John Wiley and Sons Inc. |
| record_format | MEDLINE/PubMed |
| spelling | pubmed-64467382019-04-15 :Hydrogen Doping Oxide Transistors: Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors (Adv. Sci. 7/2019) Chen, Changdong Yang, Bo‐Ru Li, Gongtan Zhou, Hang Huang, Bolong Wu, Qian Zhan, Runze Noh, Yong‐Young Minari, Takeo Zhang, Shengdong Deng, Shaozhi Sirringhaus, Henning Liu, Chuan Adv Sci (Weinh) Frontispiece In article number 1801189, Chuan Liu and co‐workers present hydrogen doped IGZO thin‐film transistors induced by simple SIN(X) encapsulation which exhibits substantially enhanced current and stability. Combing photoelectron spectroscopy, potential mapping and simulation, the nonuniform carrier distribution is revealed as the cause for the ultra‐high current and apparent device mobility, which is 40 times higher than the carrier mobility. [Image: see text] John Wiley and Sons Inc. 2019-04-03 /pmc/articles/PMC6446738/ http://dx.doi.org/10.1002/advs.201970040 Text en © 2019 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim This is an open access article under the terms of the http://creativecommons.org/licenses/by-nc/4.0/ License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited and is not used for commercial purposes. |
| spellingShingle | Frontispiece Chen, Changdong Yang, Bo‐Ru Li, Gongtan Zhou, Hang Huang, Bolong Wu, Qian Zhan, Runze Noh, Yong‐Young Minari, Takeo Zhang, Shengdong Deng, Shaozhi Sirringhaus, Henning Liu, Chuan :Hydrogen Doping Oxide Transistors: Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors (Adv. Sci. 7/2019) |
| title | :Hydrogen Doping Oxide Transistors: Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors (Adv. Sci. 7/2019) |
| title_full | :Hydrogen Doping Oxide Transistors: Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors (Adv. Sci. 7/2019) |
| title_fullStr | :Hydrogen Doping Oxide Transistors: Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors (Adv. Sci. 7/2019) |
| title_full_unstemmed | :Hydrogen Doping Oxide Transistors: Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors (Adv. Sci. 7/2019) |
| title_short | :Hydrogen Doping Oxide Transistors: Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors (Adv. Sci. 7/2019) |
| title_sort | :hydrogen doping oxide transistors: analysis of ultrahigh apparent mobility in oxide field‐effect transistors (adv. sci. 7/2019) |
| topic | Frontispiece |
| url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6446738/ http://dx.doi.org/10.1002/advs.201970040 |
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