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Beating the exclusion rule against the coexistence of robust luminescence and ferromagnetism in chalcogenide monolayers
Monolayer chalcogenide semiconductors with both luminescent and ferromagnetic properties are dreamed for simultaneous polarization and detection of the valley degree of freedom in valleytronics. However, a conventional chalcogenide monolayer lacks these coexisting properties due to their mutually ex...
Autores principales: | , , , , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6451016/ https://www.ncbi.nlm.nih.gov/pubmed/30952850 http://dx.doi.org/10.1038/s41467-019-09531-0 |
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author | Duan, Hengli Guo, Peng Wang, Chao Tan, Hao Hu, Wei Yan, Wensheng Ma, Chao Cai, Liang Song, Li Zhang, Wenhua Sun, Zhihu Wang, Linjun Zhao, Wenbo Yin, Yuewei Li, Xiaoguang Wei, Shiqiang |
author_facet | Duan, Hengli Guo, Peng Wang, Chao Tan, Hao Hu, Wei Yan, Wensheng Ma, Chao Cai, Liang Song, Li Zhang, Wenhua Sun, Zhihu Wang, Linjun Zhao, Wenbo Yin, Yuewei Li, Xiaoguang Wei, Shiqiang |
author_sort | Duan, Hengli |
collection | PubMed |
description | Monolayer chalcogenide semiconductors with both luminescent and ferromagnetic properties are dreamed for simultaneous polarization and detection of the valley degree of freedom in valleytronics. However, a conventional chalcogenide monolayer lacks these coexisting properties due to their mutually exclusive origins. Herein we demonstrate that robust ferromagnetism and photoluminescence (PL) could be achieved in a (Co, Cr)-incorporated single monolayer MoS(2), where the ferromagnetic interaction is activated by Co ions, and the nonradiative recombination channels of excitons is cut off by Cr ions. This strategy brings a 90-fold enhancement of saturation magnetization and 35-fold enhancement of PL intensity than the pristine MoS(2) monolayer. The main reasons for the coexisting ferromagnetism and PL are the electronic interactions between the impurity bands of atop Cr adatoms and substitutional Co atoms, as well as the increased content of neutral exciton. Our findings could extend the applications of two-dimensional chalcogenides into spintronics, valleytronic and photoelectric devices. |
format | Online Article Text |
id | pubmed-6451016 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-64510162019-04-08 Beating the exclusion rule against the coexistence of robust luminescence and ferromagnetism in chalcogenide monolayers Duan, Hengli Guo, Peng Wang, Chao Tan, Hao Hu, Wei Yan, Wensheng Ma, Chao Cai, Liang Song, Li Zhang, Wenhua Sun, Zhihu Wang, Linjun Zhao, Wenbo Yin, Yuewei Li, Xiaoguang Wei, Shiqiang Nat Commun Article Monolayer chalcogenide semiconductors with both luminescent and ferromagnetic properties are dreamed for simultaneous polarization and detection of the valley degree of freedom in valleytronics. However, a conventional chalcogenide monolayer lacks these coexisting properties due to their mutually exclusive origins. Herein we demonstrate that robust ferromagnetism and photoluminescence (PL) could be achieved in a (Co, Cr)-incorporated single monolayer MoS(2), where the ferromagnetic interaction is activated by Co ions, and the nonradiative recombination channels of excitons is cut off by Cr ions. This strategy brings a 90-fold enhancement of saturation magnetization and 35-fold enhancement of PL intensity than the pristine MoS(2) monolayer. The main reasons for the coexisting ferromagnetism and PL are the electronic interactions between the impurity bands of atop Cr adatoms and substitutional Co atoms, as well as the increased content of neutral exciton. Our findings could extend the applications of two-dimensional chalcogenides into spintronics, valleytronic and photoelectric devices. Nature Publishing Group UK 2019-04-05 /pmc/articles/PMC6451016/ /pubmed/30952850 http://dx.doi.org/10.1038/s41467-019-09531-0 Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Duan, Hengli Guo, Peng Wang, Chao Tan, Hao Hu, Wei Yan, Wensheng Ma, Chao Cai, Liang Song, Li Zhang, Wenhua Sun, Zhihu Wang, Linjun Zhao, Wenbo Yin, Yuewei Li, Xiaoguang Wei, Shiqiang Beating the exclusion rule against the coexistence of robust luminescence and ferromagnetism in chalcogenide monolayers |
title | Beating the exclusion rule against the coexistence of robust luminescence and ferromagnetism in chalcogenide monolayers |
title_full | Beating the exclusion rule against the coexistence of robust luminescence and ferromagnetism in chalcogenide monolayers |
title_fullStr | Beating the exclusion rule against the coexistence of robust luminescence and ferromagnetism in chalcogenide monolayers |
title_full_unstemmed | Beating the exclusion rule against the coexistence of robust luminescence and ferromagnetism in chalcogenide monolayers |
title_short | Beating the exclusion rule against the coexistence of robust luminescence and ferromagnetism in chalcogenide monolayers |
title_sort | beating the exclusion rule against the coexistence of robust luminescence and ferromagnetism in chalcogenide monolayers |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6451016/ https://www.ncbi.nlm.nih.gov/pubmed/30952850 http://dx.doi.org/10.1038/s41467-019-09531-0 |
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