Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires

Because of tunable bandgap and high carrier mobility, ternary III-V nanowires (NWs) have demonstrated enormous potential for advanced applications. However, the synthesis of large-scale and highly-crystalline In(x)Ga(1−x)Sb NWs is still a challenge. Here, we achieve high-density and crystalline stoi...

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Detalles Bibliográficos
Autores principales: Li, Dapan, Lan, Changyong, Manikandan, Arumugam, Yip, SenPo, Zhou, Ziyao, Liang, Xiaoguang, Shu, Lei, Chueh, Yu-Lun, Han, Ning, Ho, Johnny C.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6458123/
https://www.ncbi.nlm.nih.gov/pubmed/30971702
http://dx.doi.org/10.1038/s41467-019-09606-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6458123/
https://www.ncbi.nlm.nih.gov/pubmed/30971702
http://dx.doi.org/10.1038/s41467-019-09606-y

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