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Epitaxial graphene for quantum resistance metrology
Graphene-based quantised Hall resistance standards promise high precision for the unit ohm under less exclusive measurement conditions, enabling the use of compact measurement systems. To meet the requirements of metrological applications, national metrology institutes developed large-area monolayer...
Autores principales: | , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
2018
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6463316/ https://www.ncbi.nlm.nih.gov/pubmed/30996479 http://dx.doi.org/10.1088/1681-7575/aacd23 |
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author | Kruskopf, Mattias Elmquist, Randolph E |
author_facet | Kruskopf, Mattias Elmquist, Randolph E |
author_sort | Kruskopf, Mattias |
collection | PubMed |
description | Graphene-based quantised Hall resistance standards promise high precision for the unit ohm under less exclusive measurement conditions, enabling the use of compact measurement systems. To meet the requirements of metrological applications, national metrology institutes developed large-area monolayer graphene growth methods for uniform material properties and optimized device fabrication techniques. Precision measurements of the quantized Hall resistance showing the advantage of graphene over GaAs-based resistance standards demonstrate the remarkable achievements realized by the research community. This work provides an overview over the state-of-the-art technologies in this field. |
format | Online Article Text |
id | pubmed-6463316 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2018 |
record_format | MEDLINE/PubMed |
spelling | pubmed-64633162019-04-15 Epitaxial graphene for quantum resistance metrology Kruskopf, Mattias Elmquist, Randolph E Metrologia Article Graphene-based quantised Hall resistance standards promise high precision for the unit ohm under less exclusive measurement conditions, enabling the use of compact measurement systems. To meet the requirements of metrological applications, national metrology institutes developed large-area monolayer graphene growth methods for uniform material properties and optimized device fabrication techniques. Precision measurements of the quantized Hall resistance showing the advantage of graphene over GaAs-based resistance standards demonstrate the remarkable achievements realized by the research community. This work provides an overview over the state-of-the-art technologies in this field. 2018 /pmc/articles/PMC6463316/ /pubmed/30996479 http://dx.doi.org/10.1088/1681-7575/aacd23 Text en Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence (http://creativecommons.org/licenses/by/3.0) . Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. |
spellingShingle | Article Kruskopf, Mattias Elmquist, Randolph E Epitaxial graphene for quantum resistance metrology |
title | Epitaxial graphene for quantum resistance metrology |
title_full | Epitaxial graphene for quantum resistance metrology |
title_fullStr | Epitaxial graphene for quantum resistance metrology |
title_full_unstemmed | Epitaxial graphene for quantum resistance metrology |
title_short | Epitaxial graphene for quantum resistance metrology |
title_sort | epitaxial graphene for quantum resistance metrology |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6463316/ https://www.ncbi.nlm.nih.gov/pubmed/30996479 http://dx.doi.org/10.1088/1681-7575/aacd23 |
work_keys_str_mv | AT kruskopfmattias epitaxialgrapheneforquantumresistancemetrology AT elmquistrandolphe epitaxialgrapheneforquantumresistancemetrology |