Cargando…

Epitaxial graphene for quantum resistance metrology

Graphene-based quantised Hall resistance standards promise high precision for the unit ohm under less exclusive measurement conditions, enabling the use of compact measurement systems. To meet the requirements of metrological applications, national metrology institutes developed large-area monolayer...

Descripción completa

Detalles Bibliográficos
Autores principales: Kruskopf, Mattias, Elmquist, Randolph E
Formato: Online Artículo Texto
Lenguaje:English
Publicado: 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6463316/
https://www.ncbi.nlm.nih.gov/pubmed/30996479
http://dx.doi.org/10.1088/1681-7575/aacd23
_version_ 1783410741087305728
author Kruskopf, Mattias
Elmquist, Randolph E
author_facet Kruskopf, Mattias
Elmquist, Randolph E
author_sort Kruskopf, Mattias
collection PubMed
description Graphene-based quantised Hall resistance standards promise high precision for the unit ohm under less exclusive measurement conditions, enabling the use of compact measurement systems. To meet the requirements of metrological applications, national metrology institutes developed large-area monolayer graphene growth methods for uniform material properties and optimized device fabrication techniques. Precision measurements of the quantized Hall resistance showing the advantage of graphene over GaAs-based resistance standards demonstrate the remarkable achievements realized by the research community. This work provides an overview over the state-of-the-art technologies in this field.
format Online
Article
Text
id pubmed-6463316
institution National Center for Biotechnology Information
language English
publishDate 2018
record_format MEDLINE/PubMed
spelling pubmed-64633162019-04-15 Epitaxial graphene for quantum resistance metrology Kruskopf, Mattias Elmquist, Randolph E Metrologia Article Graphene-based quantised Hall resistance standards promise high precision for the unit ohm under less exclusive measurement conditions, enabling the use of compact measurement systems. To meet the requirements of metrological applications, national metrology institutes developed large-area monolayer graphene growth methods for uniform material properties and optimized device fabrication techniques. Precision measurements of the quantized Hall resistance showing the advantage of graphene over GaAs-based resistance standards demonstrate the remarkable achievements realized by the research community. This work provides an overview over the state-of-the-art technologies in this field. 2018 /pmc/articles/PMC6463316/ /pubmed/30996479 http://dx.doi.org/10.1088/1681-7575/aacd23 Text en Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence (http://creativecommons.org/licenses/by/3.0) . Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
spellingShingle Article
Kruskopf, Mattias
Elmquist, Randolph E
Epitaxial graphene for quantum resistance metrology
title Epitaxial graphene for quantum resistance metrology
title_full Epitaxial graphene for quantum resistance metrology
title_fullStr Epitaxial graphene for quantum resistance metrology
title_full_unstemmed Epitaxial graphene for quantum resistance metrology
title_short Epitaxial graphene for quantum resistance metrology
title_sort epitaxial graphene for quantum resistance metrology
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6463316/
https://www.ncbi.nlm.nih.gov/pubmed/30996479
http://dx.doi.org/10.1088/1681-7575/aacd23
work_keys_str_mv AT kruskopfmattias epitaxialgrapheneforquantumresistancemetrology
AT elmquistrandolphe epitaxialgrapheneforquantumresistancemetrology