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Terahertz electromagnetically-induced transparency of self-complementary meta-molecules on Croatian checkerboard
A terahertz (THz) electromagnetically-induced transparency (EIT) phenomenon is observed from two types of self-complementary meta-molecules (MMs) based on rectangular shaped electric split-ring resonators (eSRR) on Croatian checkerboard. Each MM contains a couple of identical size eSRRs and a couple...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6470151/ https://www.ncbi.nlm.nih.gov/pubmed/30996226 http://dx.doi.org/10.1038/s41598-019-42038-8 |
Sumario: | A terahertz (THz) electromagnetically-induced transparency (EIT) phenomenon is observed from two types of self-complementary meta-molecules (MMs) based on rectangular shaped electric split-ring resonators (eSRR) on Croatian checkerboard. Each MM contains a couple of identical size eSRRs and a couple of structural inversed eSRRs twisted π/2 in checkerboard pattern. In the first type of MM (type-I), the gap is in the middle line of eSRR. In the second type of MM (type-II), the gap is on the two arms of eSRR. Both types of MMs exhibit EIT effect. A maximum 20 ps group delay is observed at the transparency window of 0.63 THz in type-I MM; while a maximum 6.0 ps group delay is observed at the transparent window of 0.60 THz in type-II MM. The distribution of surface currents and electrical energy reveals that only CeSRR contribute to the transparency window as well as the side-modes in type-I MM, where the current leakage via contact point contributes to the low-frequency side-mode, and the coupled local inductive-capacitive (LC) oscillation in CeSRRs contributes to the high-frequency side-mode. In type-II MM, however, the localized dipolar oscillator of CeSRR contributes to the low-frequency side-mode; while the hybridization of dipole oscillation on eSRR and LC resonance on CeSRR contributes to the high-frequency side-modes. Our experimental findings manifest a new approach to develop THz slow-light devices. |
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