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Damage from Coexistence of Ferroelectric and Antiferroelectric Domains and Clustering of O Vacancies in PZT: An Elastic and Raman Study
It is often suggested that oxygen vacancies (V [Formula: see text]) are involved in fatigue and pinning of domain walls in ferroelectric (FE) materials, but generally without definite evidence or models. Here the progress of damage induced by the coexistence of FE and antiferroelectric (AFE) domains...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6472040/ https://www.ncbi.nlm.nih.gov/pubmed/30909415 http://dx.doi.org/10.3390/ma12060957 |