Dielectric Properties of Epoxy Resin Impregnated Nano-SiO(2) Modified Insulating Paper

Epoxy resin-impregnated insulation paper (RIP) composites are used as the inner insulation of dry condenser bushing in the ultra-high voltage direct current (UHVDC) power transmission system. To improve the dielectric properties of RIP, nano-SiO(2) is added to the insulation paper at concentrations of 0–4wt % before impregnation with pure epoxy resin. X-ray diffraction (XRD), scanning electron microscopy observations as well as the typical dielectric properties of relative permittivity, DC volume conductivity, DC breakdown strength, and thermally stimulated depolarization current (TSDC), were obtained. The effects of trap parameters on the breakdown field strength and volume conductivity were investigated. The DC breakdown electric field strength of the sample increased as the trap level increased. The maximum DC breakdown strength of nano-SiO(2)-modified RIP was increased by 10.6% the nano-SiO(2) content of 2 wt %. The relative permittivity and DC volume conductivity were first decreased and then increased with increasing nano-SiO(2) content. These changes occurred near the interfaces between nano-SiO(2) and RIP. The increased DC breakdown strength was mainly attributed to the increased trap level.