Colossal Permittivity and Low Dielectric Loss of Thermal Oxidation Single-Crystalline Si Wafers

In this work, thin SiO(2) insulating layers were generated on the top and bottom surfaces of single-crystalline silicon plates (n type) by thermal oxidation to obtain an insulator/semiconductor/insulator (ISI) multilayer structure. X-ray diffraction (XRD) pattern and scanning electron microscope (SE...

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Detalles Bibliográficos
Autores principales: Sun, Yalong, Wu, Di, Liu, Kai, Zheng, Fengang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6479920/
https://www.ncbi.nlm.nih.gov/pubmed/30987082
http://dx.doi.org/10.3390/ma12071102

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6479920/
https://www.ncbi.nlm.nih.gov/pubmed/30987082
http://dx.doi.org/10.3390/ma12071102

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