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Colossal Permittivity and Low Dielectric Loss of Thermal Oxidation Single-Crystalline Si Wafers
In this work, thin SiO(2) insulating layers were generated on the top and bottom surfaces of single-crystalline silicon plates (n type) by thermal oxidation to obtain an insulator/semiconductor/insulator (ISI) multilayer structure. X-ray diffraction (XRD) pattern and scanning electron microscope (SE...
Autores principales: | Sun, Yalong, Wu, Di, Liu, Kai, Zheng, Fengang |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6479920/ https://www.ncbi.nlm.nih.gov/pubmed/30987082 http://dx.doi.org/10.3390/ma12071102 |
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