Cargando…

High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide

Scalable quantum networking requires quantum systems with quantum processing capabilities. Solid state spin systems with reliable spin–optical interfaces are a leading hardware in this regard. However, available systems suffer from large electron–phonon interaction or fast spin dephasing. Here, we d...

Descripción completa

Detalles Bibliográficos
Autores principales: Nagy, Roland, Niethammer, Matthias, Widmann, Matthias, Chen, Yu-Chen, Udvarhelyi, Péter, Bonato, Cristian, Hassan, Jawad Ul, Karhu, Robin, Ivanov, Ivan G., Son, Nguyen Tien, Maze, Jeronimo R., Ohshima, Takeshi, Soykal, Öney O., Gali, Ádám, Lee, Sang-Yun, Kaiser, Florian, Wrachtrup, Jörg
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6486615/
https://www.ncbi.nlm.nih.gov/pubmed/31028260
http://dx.doi.org/10.1038/s41467-019-09873-9
_version_ 1783414373630345216
author Nagy, Roland
Niethammer, Matthias
Widmann, Matthias
Chen, Yu-Chen
Udvarhelyi, Péter
Bonato, Cristian
Hassan, Jawad Ul
Karhu, Robin
Ivanov, Ivan G.
Son, Nguyen Tien
Maze, Jeronimo R.
Ohshima, Takeshi
Soykal, Öney O.
Gali, Ádám
Lee, Sang-Yun
Kaiser, Florian
Wrachtrup, Jörg
author_facet Nagy, Roland
Niethammer, Matthias
Widmann, Matthias
Chen, Yu-Chen
Udvarhelyi, Péter
Bonato, Cristian
Hassan, Jawad Ul
Karhu, Robin
Ivanov, Ivan G.
Son, Nguyen Tien
Maze, Jeronimo R.
Ohshima, Takeshi
Soykal, Öney O.
Gali, Ádám
Lee, Sang-Yun
Kaiser, Florian
Wrachtrup, Jörg
author_sort Nagy, Roland
collection PubMed
description Scalable quantum networking requires quantum systems with quantum processing capabilities. Solid state spin systems with reliable spin–optical interfaces are a leading hardware in this regard. However, available systems suffer from large electron–phonon interaction or fast spin dephasing. Here, we demonstrate that the negatively charged silicon-vacancy centre in silicon carbide is immune to both drawbacks. Thanks to its (4)A(2) symmetry in ground and excited states, optical resonances are stable with near-Fourier-transform-limited linewidths, allowing exploitation of the spin selectivity of the optical transitions. In combination with millisecond-long spin coherence times originating from the high-purity crystal, we demonstrate high-fidelity optical initialization and coherent spin control, which we exploit to show coherent coupling to single nuclear spins with ∼1 kHz resolution. The summary of our findings makes this defect a prime candidate for realising memory-assisted quantum network applications using semiconductor-based spin-to-photon interfaces and coherently coupled nuclear spins.
format Online
Article
Text
id pubmed-6486615
institution National Center for Biotechnology Information
language English
publishDate 2019
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-64866152019-04-29 High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide Nagy, Roland Niethammer, Matthias Widmann, Matthias Chen, Yu-Chen Udvarhelyi, Péter Bonato, Cristian Hassan, Jawad Ul Karhu, Robin Ivanov, Ivan G. Son, Nguyen Tien Maze, Jeronimo R. Ohshima, Takeshi Soykal, Öney O. Gali, Ádám Lee, Sang-Yun Kaiser, Florian Wrachtrup, Jörg Nat Commun Article Scalable quantum networking requires quantum systems with quantum processing capabilities. Solid state spin systems with reliable spin–optical interfaces are a leading hardware in this regard. However, available systems suffer from large electron–phonon interaction or fast spin dephasing. Here, we demonstrate that the negatively charged silicon-vacancy centre in silicon carbide is immune to both drawbacks. Thanks to its (4)A(2) symmetry in ground and excited states, optical resonances are stable with near-Fourier-transform-limited linewidths, allowing exploitation of the spin selectivity of the optical transitions. In combination with millisecond-long spin coherence times originating from the high-purity crystal, we demonstrate high-fidelity optical initialization and coherent spin control, which we exploit to show coherent coupling to single nuclear spins with ∼1 kHz resolution. The summary of our findings makes this defect a prime candidate for realising memory-assisted quantum network applications using semiconductor-based spin-to-photon interfaces and coherently coupled nuclear spins. Nature Publishing Group UK 2019-04-26 /pmc/articles/PMC6486615/ /pubmed/31028260 http://dx.doi.org/10.1038/s41467-019-09873-9 Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Nagy, Roland
Niethammer, Matthias
Widmann, Matthias
Chen, Yu-Chen
Udvarhelyi, Péter
Bonato, Cristian
Hassan, Jawad Ul
Karhu, Robin
Ivanov, Ivan G.
Son, Nguyen Tien
Maze, Jeronimo R.
Ohshima, Takeshi
Soykal, Öney O.
Gali, Ádám
Lee, Sang-Yun
Kaiser, Florian
Wrachtrup, Jörg
High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
title High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
title_full High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
title_fullStr High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
title_full_unstemmed High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
title_short High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
title_sort high-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6486615/
https://www.ncbi.nlm.nih.gov/pubmed/31028260
http://dx.doi.org/10.1038/s41467-019-09873-9
work_keys_str_mv AT nagyroland highfidelityspinandopticalcontrolofsinglesiliconvacancycentresinsiliconcarbide
AT niethammermatthias highfidelityspinandopticalcontrolofsinglesiliconvacancycentresinsiliconcarbide
AT widmannmatthias highfidelityspinandopticalcontrolofsinglesiliconvacancycentresinsiliconcarbide
AT chenyuchen highfidelityspinandopticalcontrolofsinglesiliconvacancycentresinsiliconcarbide
AT udvarhelyipeter highfidelityspinandopticalcontrolofsinglesiliconvacancycentresinsiliconcarbide
AT bonatocristian highfidelityspinandopticalcontrolofsinglesiliconvacancycentresinsiliconcarbide
AT hassanjawadul highfidelityspinandopticalcontrolofsinglesiliconvacancycentresinsiliconcarbide
AT karhurobin highfidelityspinandopticalcontrolofsinglesiliconvacancycentresinsiliconcarbide
AT ivanovivang highfidelityspinandopticalcontrolofsinglesiliconvacancycentresinsiliconcarbide
AT sonnguyentien highfidelityspinandopticalcontrolofsinglesiliconvacancycentresinsiliconcarbide
AT mazejeronimor highfidelityspinandopticalcontrolofsinglesiliconvacancycentresinsiliconcarbide
AT ohshimatakeshi highfidelityspinandopticalcontrolofsinglesiliconvacancycentresinsiliconcarbide
AT soykaloneyo highfidelityspinandopticalcontrolofsinglesiliconvacancycentresinsiliconcarbide
AT galiadam highfidelityspinandopticalcontrolofsinglesiliconvacancycentresinsiliconcarbide
AT leesangyun highfidelityspinandopticalcontrolofsinglesiliconvacancycentresinsiliconcarbide
AT kaiserflorian highfidelityspinandopticalcontrolofsinglesiliconvacancycentresinsiliconcarbide
AT wrachtrupjorg highfidelityspinandopticalcontrolofsinglesiliconvacancycentresinsiliconcarbide