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High-mobility, trap-free charge transport in conjugated polymer diodes

Charge transport in conjugated polymer semiconductors has traditionally been thought to be limited to a low-mobility regime by pronounced energetic disorder. Much progress has recently been made in advancing carrier mobilities in field-effect transistors through developing low-disorder conjugated po...

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Autores principales: Nikolka, Mark, Broch, Katharina, Armitage, John, Hanifi, David, Nowack, Peer J., Venkateshvaran, Deepak, Sadhanala, Aditya, Saska, Jan, Mascal, Mark, Jung, Seok-Heon, Lee, Jin‐Kyun, McCulloch, Iain, Salleo, Alberto, Sirringhaus, Henning
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6509340/
https://www.ncbi.nlm.nih.gov/pubmed/31073179
http://dx.doi.org/10.1038/s41467-019-10188-y
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author Nikolka, Mark
Broch, Katharina
Armitage, John
Hanifi, David
Nowack, Peer J.
Venkateshvaran, Deepak
Sadhanala, Aditya
Saska, Jan
Mascal, Mark
Jung, Seok-Heon
Lee, Jin‐Kyun
McCulloch, Iain
Salleo, Alberto
Sirringhaus, Henning
author_facet Nikolka, Mark
Broch, Katharina
Armitage, John
Hanifi, David
Nowack, Peer J.
Venkateshvaran, Deepak
Sadhanala, Aditya
Saska, Jan
Mascal, Mark
Jung, Seok-Heon
Lee, Jin‐Kyun
McCulloch, Iain
Salleo, Alberto
Sirringhaus, Henning
author_sort Nikolka, Mark
collection PubMed
description Charge transport in conjugated polymer semiconductors has traditionally been thought to be limited to a low-mobility regime by pronounced energetic disorder. Much progress has recently been made in advancing carrier mobilities in field-effect transistors through developing low-disorder conjugated polymers. However, in diodes these polymers have to date not shown much improved mobilities, presumably reflecting the fact that in diodes lower carrier concentrations are available to fill up residual tail states in the density of states. Here, we show that the bulk charge transport in low-disorder polymers is limited by water-induced trap states and that their concentration can be dramatically reduced through incorporating small molecular additives into the polymer film. Upon incorporation of the additives we achieve space-charge limited current characteristics that resemble molecular single crystals such as rubrene with high, trap-free SCLC mobilities up to 0.2 cm(2)/Vs and a width of the residual tail state distribution comparable to k(B)T.
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spelling pubmed-65093402019-05-13 High-mobility, trap-free charge transport in conjugated polymer diodes Nikolka, Mark Broch, Katharina Armitage, John Hanifi, David Nowack, Peer J. Venkateshvaran, Deepak Sadhanala, Aditya Saska, Jan Mascal, Mark Jung, Seok-Heon Lee, Jin‐Kyun McCulloch, Iain Salleo, Alberto Sirringhaus, Henning Nat Commun Article Charge transport in conjugated polymer semiconductors has traditionally been thought to be limited to a low-mobility regime by pronounced energetic disorder. Much progress has recently been made in advancing carrier mobilities in field-effect transistors through developing low-disorder conjugated polymers. However, in diodes these polymers have to date not shown much improved mobilities, presumably reflecting the fact that in diodes lower carrier concentrations are available to fill up residual tail states in the density of states. Here, we show that the bulk charge transport in low-disorder polymers is limited by water-induced trap states and that their concentration can be dramatically reduced through incorporating small molecular additives into the polymer film. Upon incorporation of the additives we achieve space-charge limited current characteristics that resemble molecular single crystals such as rubrene with high, trap-free SCLC mobilities up to 0.2 cm(2)/Vs and a width of the residual tail state distribution comparable to k(B)T. Nature Publishing Group UK 2019-05-09 /pmc/articles/PMC6509340/ /pubmed/31073179 http://dx.doi.org/10.1038/s41467-019-10188-y Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Nikolka, Mark
Broch, Katharina
Armitage, John
Hanifi, David
Nowack, Peer J.
Venkateshvaran, Deepak
Sadhanala, Aditya
Saska, Jan
Mascal, Mark
Jung, Seok-Heon
Lee, Jin‐Kyun
McCulloch, Iain
Salleo, Alberto
Sirringhaus, Henning
High-mobility, trap-free charge transport in conjugated polymer diodes
title High-mobility, trap-free charge transport in conjugated polymer diodes
title_full High-mobility, trap-free charge transport in conjugated polymer diodes
title_fullStr High-mobility, trap-free charge transport in conjugated polymer diodes
title_full_unstemmed High-mobility, trap-free charge transport in conjugated polymer diodes
title_short High-mobility, trap-free charge transport in conjugated polymer diodes
title_sort high-mobility, trap-free charge transport in conjugated polymer diodes
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6509340/
https://www.ncbi.nlm.nih.gov/pubmed/31073179
http://dx.doi.org/10.1038/s41467-019-10188-y
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