InAs/InAsSb Strain-Balanced Superlattices for Longwave Infrared Detectors

The InAs/InAsSb type-II superlattices (T2SLs) grown on a GaSb buffer layer and GaAs substrates were theoretically investigated. Due to the stability at high operating temperatures, T2SLs could be used for detectors operating in the longwave infrared (LWIR) range for different sensors to include, e.g., CH(4) and C(2)H(6) detection, which is very relevant for health condition monitoring. The theoretical calculations were carried out by the 8 × 8 k·p method. The estimated electrons and heavy holes probability distribution in a InAs/InAsSb superlattice (SL) shows that the wave function overlap increases while the thickness of the SL period decreases. The change in the effective masses for electrons and holes versus the SL period thickness for the k(z)-direction of the Brillouin zone is shown. The structures with a period lower than 15 nm are more optimal for the construction of LWIR detectors based on InAs/InAsSb SLs. The experimental results of InAs/InAsSb T2SLs energy bandgap were found to be comparable with the theoretical one. The proper fitting of theoretically calculated and experimentally measured spectral response characteristics in terms of a strain-balanced and unbalanced structures is shown.