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The Physical Vapor Transport Method for Bulk AlN Crystal Growth
In this report, the development of physical vapor transport (PVT) methods for bulk aluminum nitride (AlN) crystal growth is reviewed. Three modified PVT methods with different features including selected growth at a conical zone, freestanding growth on a perforated sheet, and nucleation control with...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6515034/ https://www.ncbi.nlm.nih.gov/pubmed/31010239 http://dx.doi.org/10.3390/molecules24081562 |
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author | Chen, Wen-Hao Qin, Zuo-Yan Tian, Xu-Yong Zhong, Xu-Hui Sun, Zhen-Hua Li, Bai-Kui Zheng, Rui-Sheng Guo, Yuan Wu, Hong-Lei |
author_facet | Chen, Wen-Hao Qin, Zuo-Yan Tian, Xu-Yong Zhong, Xu-Hui Sun, Zhen-Hua Li, Bai-Kui Zheng, Rui-Sheng Guo, Yuan Wu, Hong-Lei |
author_sort | Chen, Wen-Hao |
collection | PubMed |
description | In this report, the development of physical vapor transport (PVT) methods for bulk aluminum nitride (AlN) crystal growth is reviewed. Three modified PVT methods with different features including selected growth at a conical zone, freestanding growth on a perforated sheet, and nucleation control with an inverse temperature gradient are discussed and compared in terms of the size and quality of the bulk AlN crystals they can produce as well as the process complexity. The PVT method with an inverse temperature gradient is able to significantly reduce the nucleation rate and realize the dominant growth of only one bulk AlN single crystal, and thus grow centimeter-sized bulk AlN single crystals. X-ray rocking curve (XRC) and Raman spectroscopy measurements showed a high crystalline quality of the prepared AlN crystals. The inverse temperature gradient provides an efficient and relatively low-cost method for the preparation of large-sized and high-quality AlN seed crystals used for seeded growth, devoted to the diameter enlargement and quality improvement of bulk AlN single crystals. |
format | Online Article Text |
id | pubmed-6515034 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-65150342019-05-30 The Physical Vapor Transport Method for Bulk AlN Crystal Growth Chen, Wen-Hao Qin, Zuo-Yan Tian, Xu-Yong Zhong, Xu-Hui Sun, Zhen-Hua Li, Bai-Kui Zheng, Rui-Sheng Guo, Yuan Wu, Hong-Lei Molecules Article In this report, the development of physical vapor transport (PVT) methods for bulk aluminum nitride (AlN) crystal growth is reviewed. Three modified PVT methods with different features including selected growth at a conical zone, freestanding growth on a perforated sheet, and nucleation control with an inverse temperature gradient are discussed and compared in terms of the size and quality of the bulk AlN crystals they can produce as well as the process complexity. The PVT method with an inverse temperature gradient is able to significantly reduce the nucleation rate and realize the dominant growth of only one bulk AlN single crystal, and thus grow centimeter-sized bulk AlN single crystals. X-ray rocking curve (XRC) and Raman spectroscopy measurements showed a high crystalline quality of the prepared AlN crystals. The inverse temperature gradient provides an efficient and relatively low-cost method for the preparation of large-sized and high-quality AlN seed crystals used for seeded growth, devoted to the diameter enlargement and quality improvement of bulk AlN single crystals. MDPI 2019-04-19 /pmc/articles/PMC6515034/ /pubmed/31010239 http://dx.doi.org/10.3390/molecules24081562 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Chen, Wen-Hao Qin, Zuo-Yan Tian, Xu-Yong Zhong, Xu-Hui Sun, Zhen-Hua Li, Bai-Kui Zheng, Rui-Sheng Guo, Yuan Wu, Hong-Lei The Physical Vapor Transport Method for Bulk AlN Crystal Growth |
title | The Physical Vapor Transport Method for Bulk AlN Crystal Growth |
title_full | The Physical Vapor Transport Method for Bulk AlN Crystal Growth |
title_fullStr | The Physical Vapor Transport Method for Bulk AlN Crystal Growth |
title_full_unstemmed | The Physical Vapor Transport Method for Bulk AlN Crystal Growth |
title_short | The Physical Vapor Transport Method for Bulk AlN Crystal Growth |
title_sort | physical vapor transport method for bulk aln crystal growth |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6515034/ https://www.ncbi.nlm.nih.gov/pubmed/31010239 http://dx.doi.org/10.3390/molecules24081562 |
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