Cargando…
Sperm-Cultured Gate Ion-Sensitive Field-Effect Transistor for Non-Optical and Live Monitoring of Sperm Capacitation
We have successfully monitored the effect of progesterone and Ca(2+) on artificially induced sperm capacitation in a real-time, noninvasive and label-free manner using an ion-sensitive field-effect transistor (ISFET) sensor. The sperm activity can be electrically detected as a change in pH generated...
Autores principales: | , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6515096/ https://www.ncbi.nlm.nih.gov/pubmed/31013976 http://dx.doi.org/10.3390/s19081784 |
_version_ | 1783418012711256064 |
---|---|
author | Saito, Akiko Sakata, Toshiya |
author_facet | Saito, Akiko Sakata, Toshiya |
author_sort | Saito, Akiko |
collection | PubMed |
description | We have successfully monitored the effect of progesterone and Ca(2+) on artificially induced sperm capacitation in a real-time, noninvasive and label-free manner using an ion-sensitive field-effect transistor (ISFET) sensor. The sperm activity can be electrically detected as a change in pH generated by sperm respiration based on the principle of the ISFET sensor. Upon adding mouse sperm to the gate of the ISFET sensor in the culture medium with progesterone, the pH decreases with an increasing concentration of progesterone from 1 to 40 μM. This is because progesterone induces Ca(2+) influx into spermatozoa and triggers multiple Ca(2+)-dependent physiological responses, which subsequently activates sperm respiration. Moreover, this pH response of the ISFET sensor is not observed for a Ca(2+)-free medium even when progesterone is introduced, which means that Ca(2+) influx is necessary for sperm activation that results in sperm capacitation. Thus, a platform based on the ISFET sensor system can provide a simple method of evaluating artificially induced sperm capacitation in the field of male infertility treatment. |
format | Online Article Text |
id | pubmed-6515096 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-65150962019-05-30 Sperm-Cultured Gate Ion-Sensitive Field-Effect Transistor for Non-Optical and Live Monitoring of Sperm Capacitation Saito, Akiko Sakata, Toshiya Sensors (Basel) Article We have successfully monitored the effect of progesterone and Ca(2+) on artificially induced sperm capacitation in a real-time, noninvasive and label-free manner using an ion-sensitive field-effect transistor (ISFET) sensor. The sperm activity can be electrically detected as a change in pH generated by sperm respiration based on the principle of the ISFET sensor. Upon adding mouse sperm to the gate of the ISFET sensor in the culture medium with progesterone, the pH decreases with an increasing concentration of progesterone from 1 to 40 μM. This is because progesterone induces Ca(2+) influx into spermatozoa and triggers multiple Ca(2+)-dependent physiological responses, which subsequently activates sperm respiration. Moreover, this pH response of the ISFET sensor is not observed for a Ca(2+)-free medium even when progesterone is introduced, which means that Ca(2+) influx is necessary for sperm activation that results in sperm capacitation. Thus, a platform based on the ISFET sensor system can provide a simple method of evaluating artificially induced sperm capacitation in the field of male infertility treatment. MDPI 2019-04-14 /pmc/articles/PMC6515096/ /pubmed/31013976 http://dx.doi.org/10.3390/s19081784 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Saito, Akiko Sakata, Toshiya Sperm-Cultured Gate Ion-Sensitive Field-Effect Transistor for Non-Optical and Live Monitoring of Sperm Capacitation |
title | Sperm-Cultured Gate Ion-Sensitive Field-Effect Transistor for Non-Optical and Live Monitoring of Sperm Capacitation |
title_full | Sperm-Cultured Gate Ion-Sensitive Field-Effect Transistor for Non-Optical and Live Monitoring of Sperm Capacitation |
title_fullStr | Sperm-Cultured Gate Ion-Sensitive Field-Effect Transistor for Non-Optical and Live Monitoring of Sperm Capacitation |
title_full_unstemmed | Sperm-Cultured Gate Ion-Sensitive Field-Effect Transistor for Non-Optical and Live Monitoring of Sperm Capacitation |
title_short | Sperm-Cultured Gate Ion-Sensitive Field-Effect Transistor for Non-Optical and Live Monitoring of Sperm Capacitation |
title_sort | sperm-cultured gate ion-sensitive field-effect transistor for non-optical and live monitoring of sperm capacitation |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6515096/ https://www.ncbi.nlm.nih.gov/pubmed/31013976 http://dx.doi.org/10.3390/s19081784 |
work_keys_str_mv | AT saitoakiko spermculturedgateionsensitivefieldeffecttransistorfornonopticalandlivemonitoringofspermcapacitation AT sakatatoshiya spermculturedgateionsensitivefieldeffecttransistorfornonopticalandlivemonitoringofspermcapacitation |