Cargando…

Sperm-Cultured Gate Ion-Sensitive Field-Effect Transistor for Non-Optical and Live Monitoring of Sperm Capacitation

We have successfully monitored the effect of progesterone and Ca(2+) on artificially induced sperm capacitation in a real-time, noninvasive and label-free manner using an ion-sensitive field-effect transistor (ISFET) sensor. The sperm activity can be electrically detected as a change in pH generated...

Descripción completa

Detalles Bibliográficos
Autores principales: Saito, Akiko, Sakata, Toshiya
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6515096/
https://www.ncbi.nlm.nih.gov/pubmed/31013976
http://dx.doi.org/10.3390/s19081784
_version_ 1783418012711256064
author Saito, Akiko
Sakata, Toshiya
author_facet Saito, Akiko
Sakata, Toshiya
author_sort Saito, Akiko
collection PubMed
description We have successfully monitored the effect of progesterone and Ca(2+) on artificially induced sperm capacitation in a real-time, noninvasive and label-free manner using an ion-sensitive field-effect transistor (ISFET) sensor. The sperm activity can be electrically detected as a change in pH generated by sperm respiration based on the principle of the ISFET sensor. Upon adding mouse sperm to the gate of the ISFET sensor in the culture medium with progesterone, the pH decreases with an increasing concentration of progesterone from 1 to 40 μM. This is because progesterone induces Ca(2+) influx into spermatozoa and triggers multiple Ca(2+)-dependent physiological responses, which subsequently activates sperm respiration. Moreover, this pH response of the ISFET sensor is not observed for a Ca(2+)-free medium even when progesterone is introduced, which means that Ca(2+) influx is necessary for sperm activation that results in sperm capacitation. Thus, a platform based on the ISFET sensor system can provide a simple method of evaluating artificially induced sperm capacitation in the field of male infertility treatment.
format Online
Article
Text
id pubmed-6515096
institution National Center for Biotechnology Information
language English
publishDate 2019
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-65150962019-05-30 Sperm-Cultured Gate Ion-Sensitive Field-Effect Transistor for Non-Optical and Live Monitoring of Sperm Capacitation Saito, Akiko Sakata, Toshiya Sensors (Basel) Article We have successfully monitored the effect of progesterone and Ca(2+) on artificially induced sperm capacitation in a real-time, noninvasive and label-free manner using an ion-sensitive field-effect transistor (ISFET) sensor. The sperm activity can be electrically detected as a change in pH generated by sperm respiration based on the principle of the ISFET sensor. Upon adding mouse sperm to the gate of the ISFET sensor in the culture medium with progesterone, the pH decreases with an increasing concentration of progesterone from 1 to 40 μM. This is because progesterone induces Ca(2+) influx into spermatozoa and triggers multiple Ca(2+)-dependent physiological responses, which subsequently activates sperm respiration. Moreover, this pH response of the ISFET sensor is not observed for a Ca(2+)-free medium even when progesterone is introduced, which means that Ca(2+) influx is necessary for sperm activation that results in sperm capacitation. Thus, a platform based on the ISFET sensor system can provide a simple method of evaluating artificially induced sperm capacitation in the field of male infertility treatment. MDPI 2019-04-14 /pmc/articles/PMC6515096/ /pubmed/31013976 http://dx.doi.org/10.3390/s19081784 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Saito, Akiko
Sakata, Toshiya
Sperm-Cultured Gate Ion-Sensitive Field-Effect Transistor for Non-Optical and Live Monitoring of Sperm Capacitation
title Sperm-Cultured Gate Ion-Sensitive Field-Effect Transistor for Non-Optical and Live Monitoring of Sperm Capacitation
title_full Sperm-Cultured Gate Ion-Sensitive Field-Effect Transistor for Non-Optical and Live Monitoring of Sperm Capacitation
title_fullStr Sperm-Cultured Gate Ion-Sensitive Field-Effect Transistor for Non-Optical and Live Monitoring of Sperm Capacitation
title_full_unstemmed Sperm-Cultured Gate Ion-Sensitive Field-Effect Transistor for Non-Optical and Live Monitoring of Sperm Capacitation
title_short Sperm-Cultured Gate Ion-Sensitive Field-Effect Transistor for Non-Optical and Live Monitoring of Sperm Capacitation
title_sort sperm-cultured gate ion-sensitive field-effect transistor for non-optical and live monitoring of sperm capacitation
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6515096/
https://www.ncbi.nlm.nih.gov/pubmed/31013976
http://dx.doi.org/10.3390/s19081784
work_keys_str_mv AT saitoakiko spermculturedgateionsensitivefieldeffecttransistorfornonopticalandlivemonitoringofspermcapacitation
AT sakatatoshiya spermculturedgateionsensitivefieldeffecttransistorfornonopticalandlivemonitoringofspermcapacitation