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How to Measure and Calculate Equivalent Series Resistance of Electric Double-Layer Capacitors

Electric double-layer capacitors (EDLCs) are energy storage devices that have attracted attention from the scientific community due to their high specific power storage capabilities. The standard method for determining the maximum power (P(max)) of these devices uses the relation P(max) = U(2)/4R(ES...

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Autores principales: Vicentini, Rafael, Da Silva, Leonardo Morais, Cecilio Junior, Edson Pedro, Alves, Thayane Almeida, Nunes, Willian Gonçalves, Zanin, Hudson
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6515551/
https://www.ncbi.nlm.nih.gov/pubmed/31013767
http://dx.doi.org/10.3390/molecules24081452
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author Vicentini, Rafael
Da Silva, Leonardo Morais
Cecilio Junior, Edson Pedro
Alves, Thayane Almeida
Nunes, Willian Gonçalves
Zanin, Hudson
author_facet Vicentini, Rafael
Da Silva, Leonardo Morais
Cecilio Junior, Edson Pedro
Alves, Thayane Almeida
Nunes, Willian Gonçalves
Zanin, Hudson
author_sort Vicentini, Rafael
collection PubMed
description Electric double-layer capacitors (EDLCs) are energy storage devices that have attracted attention from the scientific community due to their high specific power storage capabilities. The standard method for determining the maximum power (P(max)) of these devices uses the relation P(max) = U(2)/4R(ESR), where U stands for the cell voltage and R(ESR) for the equivalent series resistance. Despite the relevance of R(ESR), one can observe a lack of consensus in the literature regarding the determination of this parameter from the galvanostatic charge-discharge findings. In addition, a literature survey revealed that roughly half of the scientific papers have calculated the R(ESR) values using the electrochemical impedance spectroscopy (EIS) technique, while the other half used the galvanostatic charge discharge (GCD) method. R(ESR) values extracted from EIS at high frequencies (>10 kHz) do not depend on the particular equivalent circuit model. However, the conventional GCD method better resembles the real situation of the device operation, and thus its use is of paramount importance for practical purposes. In the latter case, the voltage drop (ΔU) verified at the charge-discharge transition for a given applied current (I) is used in conjunction with Ohm’s law to obtain the R(ESR) (e.g., R(ESR) = ΔU/ΔI). However, several papers have caused a great confusion in the literature considering only applied current (I). In order to shed light on this important subject, we report in this work a rational analysis regarding the GCD method in order to prove that to obtain reliable R(ESR) values the voltage drop must be normalized by a factor of two (e.g., R(ESR) = ΔU/2I).
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spelling pubmed-65155512019-05-30 How to Measure and Calculate Equivalent Series Resistance of Electric Double-Layer Capacitors Vicentini, Rafael Da Silva, Leonardo Morais Cecilio Junior, Edson Pedro Alves, Thayane Almeida Nunes, Willian Gonçalves Zanin, Hudson Molecules Concept Paper Electric double-layer capacitors (EDLCs) are energy storage devices that have attracted attention from the scientific community due to their high specific power storage capabilities. The standard method for determining the maximum power (P(max)) of these devices uses the relation P(max) = U(2)/4R(ESR), where U stands for the cell voltage and R(ESR) for the equivalent series resistance. Despite the relevance of R(ESR), one can observe a lack of consensus in the literature regarding the determination of this parameter from the galvanostatic charge-discharge findings. In addition, a literature survey revealed that roughly half of the scientific papers have calculated the R(ESR) values using the electrochemical impedance spectroscopy (EIS) technique, while the other half used the galvanostatic charge discharge (GCD) method. R(ESR) values extracted from EIS at high frequencies (>10 kHz) do not depend on the particular equivalent circuit model. However, the conventional GCD method better resembles the real situation of the device operation, and thus its use is of paramount importance for practical purposes. In the latter case, the voltage drop (ΔU) verified at the charge-discharge transition for a given applied current (I) is used in conjunction with Ohm’s law to obtain the R(ESR) (e.g., R(ESR) = ΔU/ΔI). However, several papers have caused a great confusion in the literature considering only applied current (I). In order to shed light on this important subject, we report in this work a rational analysis regarding the GCD method in order to prove that to obtain reliable R(ESR) values the voltage drop must be normalized by a factor of two (e.g., R(ESR) = ΔU/2I). MDPI 2019-04-12 /pmc/articles/PMC6515551/ /pubmed/31013767 http://dx.doi.org/10.3390/molecules24081452 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Concept Paper
Vicentini, Rafael
Da Silva, Leonardo Morais
Cecilio Junior, Edson Pedro
Alves, Thayane Almeida
Nunes, Willian Gonçalves
Zanin, Hudson
How to Measure and Calculate Equivalent Series Resistance of Electric Double-Layer Capacitors
title How to Measure and Calculate Equivalent Series Resistance of Electric Double-Layer Capacitors
title_full How to Measure and Calculate Equivalent Series Resistance of Electric Double-Layer Capacitors
title_fullStr How to Measure and Calculate Equivalent Series Resistance of Electric Double-Layer Capacitors
title_full_unstemmed How to Measure and Calculate Equivalent Series Resistance of Electric Double-Layer Capacitors
title_short How to Measure and Calculate Equivalent Series Resistance of Electric Double-Layer Capacitors
title_sort how to measure and calculate equivalent series resistance of electric double-layer capacitors
topic Concept Paper
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6515551/
https://www.ncbi.nlm.nih.gov/pubmed/31013767
http://dx.doi.org/10.3390/molecules24081452
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