In(2)S(3) Quantum Dots: Preparation, Properties and Optoelectronic Application

Low-dimensional semiconductors exhibit remarkable performances in many device applications because of their unique physical, electrical, and optical properties. In this paper, we report a novel and facile method to synthesize In(2)S(3) quantum dots (QDs) at atmospheric pressure and room temperature...

Descripción completa

Detalles Bibliográficos
Autores principales: Li, Rujie, Tang, Libin, Zhao, Qing, Ly, Thuc Hue, Teng, Kar Seng, Li, Yao, Hu, Yanbo, Shu, Chang, Lau, Shu Ping
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6517471/
https://www.ncbi.nlm.nih.gov/pubmed/31089901
http://dx.doi.org/10.1186/s11671-019-2992-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6517471/
https://www.ncbi.nlm.nih.gov/pubmed/31089901
http://dx.doi.org/10.1186/s11671-019-2992-0

Ejemplares similares