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NO gas sensor based on ZnGa(2)O(4) epilayer grown by metalorganic chemical vapor deposition

A gas sensor based on a ZnGa(2)O(4)(ZGO) thin film grown by metalorganic chemical vapor deposition operated under the different temperature from 25 °C to 300 °C is investigated in this study. This sensor shows great sensing properties at 300 °C. The sensitivity of this sensor is 22.21 as exposed to...

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Autores principales: Wu, Min-Ru, Li, Wei-Zhong, Tung, Chun-Yi, Huang, Chiung-Yi, Chiang, Yi-Hung, Liu, Po-Liang, Horng, Ray-Hua
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6522479/
https://www.ncbi.nlm.nih.gov/pubmed/31097726
http://dx.doi.org/10.1038/s41598-019-43752-z
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author Wu, Min-Ru
Li, Wei-Zhong
Tung, Chun-Yi
Huang, Chiung-Yi
Chiang, Yi-Hung
Liu, Po-Liang
Horng, Ray-Hua
author_facet Wu, Min-Ru
Li, Wei-Zhong
Tung, Chun-Yi
Huang, Chiung-Yi
Chiang, Yi-Hung
Liu, Po-Liang
Horng, Ray-Hua
author_sort Wu, Min-Ru
collection PubMed
description A gas sensor based on a ZnGa(2)O(4)(ZGO) thin film grown by metalorganic chemical vapor deposition operated under the different temperature from 25 °C to 300 °C is investigated in this study. This sensor shows great sensing properties at 300 °C. The sensitivity of this sensor is 22.21 as exposed to 6.25 ppm of NO and its response time is 57 s. Besides that, the sensitivities are 1.18, 1.27, 1.06, and 1.00 when exposed to NO(2)(500 ppb), SO(2) (125 ppm), CO (125 ppm), and CO(2) (1500 ppm), respectively. These results imply that the ZGO gas sensor not only has high sensitivity, but also has great selectivity for NO gas. Moreover, the obtained results suggest that ZGO sensors are suitable for the internet of things(IOT) applications.
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spelling pubmed-65224792019-05-28 NO gas sensor based on ZnGa(2)O(4) epilayer grown by metalorganic chemical vapor deposition Wu, Min-Ru Li, Wei-Zhong Tung, Chun-Yi Huang, Chiung-Yi Chiang, Yi-Hung Liu, Po-Liang Horng, Ray-Hua Sci Rep Article A gas sensor based on a ZnGa(2)O(4)(ZGO) thin film grown by metalorganic chemical vapor deposition operated under the different temperature from 25 °C to 300 °C is investigated in this study. This sensor shows great sensing properties at 300 °C. The sensitivity of this sensor is 22.21 as exposed to 6.25 ppm of NO and its response time is 57 s. Besides that, the sensitivities are 1.18, 1.27, 1.06, and 1.00 when exposed to NO(2)(500 ppb), SO(2) (125 ppm), CO (125 ppm), and CO(2) (1500 ppm), respectively. These results imply that the ZGO gas sensor not only has high sensitivity, but also has great selectivity for NO gas. Moreover, the obtained results suggest that ZGO sensors are suitable for the internet of things(IOT) applications. Nature Publishing Group UK 2019-05-16 /pmc/articles/PMC6522479/ /pubmed/31097726 http://dx.doi.org/10.1038/s41598-019-43752-z Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Wu, Min-Ru
Li, Wei-Zhong
Tung, Chun-Yi
Huang, Chiung-Yi
Chiang, Yi-Hung
Liu, Po-Liang
Horng, Ray-Hua
NO gas sensor based on ZnGa(2)O(4) epilayer grown by metalorganic chemical vapor deposition
title NO gas sensor based on ZnGa(2)O(4) epilayer grown by metalorganic chemical vapor deposition
title_full NO gas sensor based on ZnGa(2)O(4) epilayer grown by metalorganic chemical vapor deposition
title_fullStr NO gas sensor based on ZnGa(2)O(4) epilayer grown by metalorganic chemical vapor deposition
title_full_unstemmed NO gas sensor based on ZnGa(2)O(4) epilayer grown by metalorganic chemical vapor deposition
title_short NO gas sensor based on ZnGa(2)O(4) epilayer grown by metalorganic chemical vapor deposition
title_sort no gas sensor based on znga(2)o(4) epilayer grown by metalorganic chemical vapor deposition
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6522479/
https://www.ncbi.nlm.nih.gov/pubmed/31097726
http://dx.doi.org/10.1038/s41598-019-43752-z
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