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NO gas sensor based on ZnGa(2)O(4) epilayer grown by metalorganic chemical vapor deposition
A gas sensor based on a ZnGa(2)O(4)(ZGO) thin film grown by metalorganic chemical vapor deposition operated under the different temperature from 25 °C to 300 °C is investigated in this study. This sensor shows great sensing properties at 300 °C. The sensitivity of this sensor is 22.21 as exposed to...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6522479/ https://www.ncbi.nlm.nih.gov/pubmed/31097726 http://dx.doi.org/10.1038/s41598-019-43752-z |
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author | Wu, Min-Ru Li, Wei-Zhong Tung, Chun-Yi Huang, Chiung-Yi Chiang, Yi-Hung Liu, Po-Liang Horng, Ray-Hua |
author_facet | Wu, Min-Ru Li, Wei-Zhong Tung, Chun-Yi Huang, Chiung-Yi Chiang, Yi-Hung Liu, Po-Liang Horng, Ray-Hua |
author_sort | Wu, Min-Ru |
collection | PubMed |
description | A gas sensor based on a ZnGa(2)O(4)(ZGO) thin film grown by metalorganic chemical vapor deposition operated under the different temperature from 25 °C to 300 °C is investigated in this study. This sensor shows great sensing properties at 300 °C. The sensitivity of this sensor is 22.21 as exposed to 6.25 ppm of NO and its response time is 57 s. Besides that, the sensitivities are 1.18, 1.27, 1.06, and 1.00 when exposed to NO(2)(500 ppb), SO(2) (125 ppm), CO (125 ppm), and CO(2) (1500 ppm), respectively. These results imply that the ZGO gas sensor not only has high sensitivity, but also has great selectivity for NO gas. Moreover, the obtained results suggest that ZGO sensors are suitable for the internet of things(IOT) applications. |
format | Online Article Text |
id | pubmed-6522479 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-65224792019-05-28 NO gas sensor based on ZnGa(2)O(4) epilayer grown by metalorganic chemical vapor deposition Wu, Min-Ru Li, Wei-Zhong Tung, Chun-Yi Huang, Chiung-Yi Chiang, Yi-Hung Liu, Po-Liang Horng, Ray-Hua Sci Rep Article A gas sensor based on a ZnGa(2)O(4)(ZGO) thin film grown by metalorganic chemical vapor deposition operated under the different temperature from 25 °C to 300 °C is investigated in this study. This sensor shows great sensing properties at 300 °C. The sensitivity of this sensor is 22.21 as exposed to 6.25 ppm of NO and its response time is 57 s. Besides that, the sensitivities are 1.18, 1.27, 1.06, and 1.00 when exposed to NO(2)(500 ppb), SO(2) (125 ppm), CO (125 ppm), and CO(2) (1500 ppm), respectively. These results imply that the ZGO gas sensor not only has high sensitivity, but also has great selectivity for NO gas. Moreover, the obtained results suggest that ZGO sensors are suitable for the internet of things(IOT) applications. Nature Publishing Group UK 2019-05-16 /pmc/articles/PMC6522479/ /pubmed/31097726 http://dx.doi.org/10.1038/s41598-019-43752-z Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Wu, Min-Ru Li, Wei-Zhong Tung, Chun-Yi Huang, Chiung-Yi Chiang, Yi-Hung Liu, Po-Liang Horng, Ray-Hua NO gas sensor based on ZnGa(2)O(4) epilayer grown by metalorganic chemical vapor deposition |
title | NO gas sensor based on ZnGa(2)O(4) epilayer grown by metalorganic chemical vapor deposition |
title_full | NO gas sensor based on ZnGa(2)O(4) epilayer grown by metalorganic chemical vapor deposition |
title_fullStr | NO gas sensor based on ZnGa(2)O(4) epilayer grown by metalorganic chemical vapor deposition |
title_full_unstemmed | NO gas sensor based on ZnGa(2)O(4) epilayer grown by metalorganic chemical vapor deposition |
title_short | NO gas sensor based on ZnGa(2)O(4) epilayer grown by metalorganic chemical vapor deposition |
title_sort | no gas sensor based on znga(2)o(4) epilayer grown by metalorganic chemical vapor deposition |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6522479/ https://www.ncbi.nlm.nih.gov/pubmed/31097726 http://dx.doi.org/10.1038/s41598-019-43752-z |
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