Threshold Switching Selectors: A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications (Adv. Sci. 10/2019)

A high‐performance selector is critical for X‐point high density memory chips. In article number 1900024, Huaqiang Wu, Bin Gao, Peng Zhou, and co‐workers present a threshold switching selector based on highly‐ordered Ag nanodots that can provide sufficiently large RESET current (≈2.3 mA) and extreme...

Descripción completa

Detalles Bibliográficos
Autores principales: Hua, Qilin, Wu, Huaqiang, Gao, Bin, Zhao, Meiran, Li, Yujia, Li, Xinyi, Hou, Xiang, (Marvin) Chang, Meng‐Fan, Zhou, Peng, Qian, He
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2019
Materias:
Inside Front Cover
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6523387/
http://dx.doi.org/10.1002/advs.201970058
Descripción
Sumario:A high‐performance selector is critical for X‐point high density memory chips. In article number 1900024, Huaqiang Wu, Bin Gao, Peng Zhou, and co‐workers present a threshold switching selector based on highly‐ordered Ag nanodots that can provide sufficiently large RESET current (≈2.3 mA) and extremely high selectivity (>10(9)). Limited Ag migration into electrolyte and multiple weak Ag filaments formation/rupture contribute to the enhanced selector performance. Such a high‐performance threshold switching selector may thus lead to innovative applications in circuits and systems, especially for X‐point memory applications. [Image: see text]

Ejemplares similares