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Threshold Switching Selectors: A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications (Adv. Sci. 10/2019)
A high‐performance selector is critical for X‐point high density memory chips. In article number 1900024, Huaqiang Wu, Bin Gao, Peng Zhou, and co‐workers present a threshold switching selector based on highly‐ordered Ag nanodots that can provide sufficiently large RESET current (≈2.3 mA) and extreme...
| Autores principales: | , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
John Wiley and Sons Inc.
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6523387/ http://dx.doi.org/10.1002/advs.201970058 |
| _version_ | 1783419322549403648 |
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| author | Hua, Qilin Wu, Huaqiang Gao, Bin Zhao, Meiran Li, Yujia Li, Xinyi Hou, Xiang (Marvin) Chang, Meng‐Fan Zhou, Peng Qian, He |
| author_facet | Hua, Qilin Wu, Huaqiang Gao, Bin Zhao, Meiran Li, Yujia Li, Xinyi Hou, Xiang (Marvin) Chang, Meng‐Fan Zhou, Peng Qian, He |
| author_sort | Hua, Qilin |
| collection | PubMed |
| description | A high‐performance selector is critical for X‐point high density memory chips. In article number 1900024, Huaqiang Wu, Bin Gao, Peng Zhou, and co‐workers present a threshold switching selector based on highly‐ordered Ag nanodots that can provide sufficiently large RESET current (≈2.3 mA) and extremely high selectivity (>10(9)). Limited Ag migration into electrolyte and multiple weak Ag filaments formation/rupture contribute to the enhanced selector performance. Such a high‐performance threshold switching selector may thus lead to innovative applications in circuits and systems, especially for X‐point memory applications. [Image: see text] |
| format | Online Article Text |
| id | pubmed-6523387 |
| institution | National Center for Biotechnology Information |
| language | English |
| publishDate | 2019 |
| publisher | John Wiley and Sons Inc. |
| record_format | MEDLINE/PubMed |
| spelling | pubmed-65233872019-05-24 Threshold Switching Selectors: A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications (Adv. Sci. 10/2019) Hua, Qilin Wu, Huaqiang Gao, Bin Zhao, Meiran Li, Yujia Li, Xinyi Hou, Xiang (Marvin) Chang, Meng‐Fan Zhou, Peng Qian, He Adv Sci (Weinh) Inside Front Cover A high‐performance selector is critical for X‐point high density memory chips. In article number 1900024, Huaqiang Wu, Bin Gao, Peng Zhou, and co‐workers present a threshold switching selector based on highly‐ordered Ag nanodots that can provide sufficiently large RESET current (≈2.3 mA) and extremely high selectivity (>10(9)). Limited Ag migration into electrolyte and multiple weak Ag filaments formation/rupture contribute to the enhanced selector performance. Such a high‐performance threshold switching selector may thus lead to innovative applications in circuits and systems, especially for X‐point memory applications. [Image: see text] John Wiley and Sons Inc. 2019-05-17 /pmc/articles/PMC6523387/ http://dx.doi.org/10.1002/advs.201970058 Text en © 2019 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim This is an open access article under the terms of the http://creativecommons.org/licenses/by-nc/4.0/ License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited and is not used for commercial purposes. |
| spellingShingle | Inside Front Cover Hua, Qilin Wu, Huaqiang Gao, Bin Zhao, Meiran Li, Yujia Li, Xinyi Hou, Xiang (Marvin) Chang, Meng‐Fan Zhou, Peng Qian, He Threshold Switching Selectors: A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications (Adv. Sci. 10/2019) |
| title | Threshold Switching Selectors: A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications (Adv. Sci. 10/2019) |
| title_full | Threshold Switching Selectors: A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications (Adv. Sci. 10/2019) |
| title_fullStr | Threshold Switching Selectors: A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications (Adv. Sci. 10/2019) |
| title_full_unstemmed | Threshold Switching Selectors: A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications (Adv. Sci. 10/2019) |
| title_short | Threshold Switching Selectors: A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications (Adv. Sci. 10/2019) |
| title_sort | threshold switching selectors: a threshold switching selector based on highly ordered ag nanodots for x‐point memory applications (adv. sci. 10/2019) |
| topic | Inside Front Cover |
| url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6523387/ http://dx.doi.org/10.1002/advs.201970058 |
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