Facile and Controllable Synthesis of Large-Area Monolayer WS(2) Flakes Based on WO(3) Precursor Drop-Casted Substrates by Chemical Vapor Deposition

Monolayer WS(2) (Tungsten Disulfide) with a direct-energy gap and excellent photoluminescence quantum yield at room temperature shows potential applications in optoelectronics. However, controllable synthesis of large-area monolayer WS(2) is still challenging because of the difficulty in controlling the interrelated growth parameters. Herein, we report a facile and controllable method for synthesis of large-area monolayer WS(2) flakes by direct sulfurization of powdered WO(3) (Tungsten Trioxide) drop-casted on SiO(2)/Si substrates in a one-end sealed quartz tube. The samples were thoroughly characterized by an optical microscope, atomic force microscope, transmission electron microscope, fluorescence microscope, photoluminescence spectrometer, and Raman spectrometer. The obtained results indicate that large triangular monolayer WS(2) flakes with an edge length up to 250 to 370 μm and homogeneous crystallinity were readily synthesized within 5 min of growth. We demonstrate that the as-grown monolayer WS(2) flakes show distinctly size-dependent fluorescence emission, which is mainly attributed to the heterogeneous release of intrinsic tensile strain after growth.