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Intersubband Optical Nonlinearity of GeSn Quantum Dots under Vertical Electric Field

The impact of vertical electrical field on the electron related linear and 3rd order nonlinear optical properties are evaluated numerically for pyramidal GeSn quantum dots with different sizes. The electric field induced electron confining potential profile’s modification is found to alter the trans...

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Detalles Bibliográficos
Autores principales: Baira, Mourad, Salem, Bassem, Ahamad Madhar, Niyaz, Ilahi, Bouraoui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6523723/
https://www.ncbi.nlm.nih.gov/pubmed/31013735
http://dx.doi.org/10.3390/mi10040243
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author Baira, Mourad
Salem, Bassem
Ahamad Madhar, Niyaz
Ilahi, Bouraoui
author_facet Baira, Mourad
Salem, Bassem
Ahamad Madhar, Niyaz
Ilahi, Bouraoui
author_sort Baira, Mourad
collection PubMed
description The impact of vertical electrical field on the electron related linear and 3rd order nonlinear optical properties are evaluated numerically for pyramidal GeSn quantum dots with different sizes. The electric field induced electron confining potential profile’s modification is found to alter the transition energies and the transition dipole moment, particularly for larger dot sizes. These variations strongly influence the intersubband photoabsorption coefficients and changes in the refractive index with an increasing tendency of the 3rd order nonlinear component with increasing both quantum dot (QD) size and applied electric field. The results show that intersubband optical properties of GeSn quantum dots can be successively tuned by external polarization.
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spelling pubmed-65237232019-06-03 Intersubband Optical Nonlinearity of GeSn Quantum Dots under Vertical Electric Field Baira, Mourad Salem, Bassem Ahamad Madhar, Niyaz Ilahi, Bouraoui Micromachines (Basel) Article The impact of vertical electrical field on the electron related linear and 3rd order nonlinear optical properties are evaluated numerically for pyramidal GeSn quantum dots with different sizes. The electric field induced electron confining potential profile’s modification is found to alter the transition energies and the transition dipole moment, particularly for larger dot sizes. These variations strongly influence the intersubband photoabsorption coefficients and changes in the refractive index with an increasing tendency of the 3rd order nonlinear component with increasing both quantum dot (QD) size and applied electric field. The results show that intersubband optical properties of GeSn quantum dots can be successively tuned by external polarization. MDPI 2019-04-12 /pmc/articles/PMC6523723/ /pubmed/31013735 http://dx.doi.org/10.3390/mi10040243 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Baira, Mourad
Salem, Bassem
Ahamad Madhar, Niyaz
Ilahi, Bouraoui
Intersubband Optical Nonlinearity of GeSn Quantum Dots under Vertical Electric Field
title Intersubband Optical Nonlinearity of GeSn Quantum Dots under Vertical Electric Field
title_full Intersubband Optical Nonlinearity of GeSn Quantum Dots under Vertical Electric Field
title_fullStr Intersubband Optical Nonlinearity of GeSn Quantum Dots under Vertical Electric Field
title_full_unstemmed Intersubband Optical Nonlinearity of GeSn Quantum Dots under Vertical Electric Field
title_short Intersubband Optical Nonlinearity of GeSn Quantum Dots under Vertical Electric Field
title_sort intersubband optical nonlinearity of gesn quantum dots under vertical electric field
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6523723/
https://www.ncbi.nlm.nih.gov/pubmed/31013735
http://dx.doi.org/10.3390/mi10040243
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