Design Optimization of Double-Gate Isosceles Trapezoid Tunnel Field-Effect Transistor (DGIT-TFET)

Recently, tunnel field-effect transistors (TFETs) have been regarded as next-generation ultra-low-power semi-conductor devices. To commercialize the TFETs, however, it is necessary to improve an on-state current caused by tunnel-junction resistance and to suppress a leakage current from ambipolar current (I(AMB)). In this paper, we suggest a novel TFET which features double gate, vertical, and trapezoid isosceles channel structure to solve the above-mentioned technical issues. The device design is optimized by examining its electrical characteristics with the help of technology computer-aided design (TCAD) simulation. As a result, double-gate isosceles trapezoid (DGIT) TFET shows a much better performance than the conventional TFET in terms of ON-state current (I(ON)), I(AMB), and gate-to-drain capacitance (C(GD)). It is confirmed that an inverter composed of DGIT-TFETs can operate with less than 1 ns intrinsic delay time and negligible voltage overshoot.