Two-Dimensional-Like Amorphous Indium Tungsten Oxide Nano-Sheet Junctionless Transistors with Low Operation Voltage

In this work, we have successfully demonstrated the junctionless (JL) transistors with two-dimensional-like (2D-like) nano-sheet (NS) material, amorphous indium tungsten oxide (a-IWO), as an active channel layer. The influences of the different gate insulator (GI) materials and the scalings of GI th...

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Detalles Bibliográficos
Autores principales: Kuo, Po-Yi, Chang, Chien-Min, Liu, I-Han, Liu, Po-Tsun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6527572/
https://www.ncbi.nlm.nih.gov/pubmed/31110283
http://dx.doi.org/10.1038/s41598-019-44131-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6527572/
https://www.ncbi.nlm.nih.gov/pubmed/31110283
http://dx.doi.org/10.1038/s41598-019-44131-4

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