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Spin-dependent scattering induced negative magnetoresistance in topological insulator Bi(2)Te(3) nanowires
Studies of negative magnetoresistance in novel materials have recently been in the forefront of spintronic research. Here, we report an experimental observation of the temperature dependent negative magnetoresistance in Bi(2)Te(3) topological insulator (TI) nanowires at ultralow temperatures (20 mK)...
Autores principales: | , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6534536/ https://www.ncbi.nlm.nih.gov/pubmed/31127174 http://dx.doi.org/10.1038/s41598-019-44265-5 |
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author | Bhattacharyya, Biplab Singh, Bahadur Aloysius, R. P. Yadav, Reena Su, Chenliang Lin, Hsin Auluck, S. Gupta, Anurag Senguttuvan, T. D. Husale, Sudhir |
author_facet | Bhattacharyya, Biplab Singh, Bahadur Aloysius, R. P. Yadav, Reena Su, Chenliang Lin, Hsin Auluck, S. Gupta, Anurag Senguttuvan, T. D. Husale, Sudhir |
author_sort | Bhattacharyya, Biplab |
collection | PubMed |
description | Studies of negative magnetoresistance in novel materials have recently been in the forefront of spintronic research. Here, we report an experimental observation of the temperature dependent negative magnetoresistance in Bi(2)Te(3) topological insulator (TI) nanowires at ultralow temperatures (20 mK). We find a crossover from negative to positive magnetoresistance while increasing temperature under longitudinal magnetic field. We observe a large negative magnetoresistance which reaches −22% at 8 T. The interplay between negative and positive magnetoresistance can be understood in terms of the competition between dephasing and spin-orbit scattering time scales. Based on the first-principles calculations within a density functional theory framework, we demonstrate that disorder (substitutional) by Ga(+) ion milling process, which is used to fabricate nanowires, induces local magnetic moments in Bi(2)Te(3) crystal that can lead to spin-dependent scattering of surface and bulk electrons. These experimental findings show a significant advance in the nanoscale spintronics applications based on longitudinal magnetoresistance in TIs. Our experimental results of large negative longitudinal magnetoresistance in 3D TIs further indicate that axial anomaly is a universal phenomenon in generic 3D metals. |
format | Online Article Text |
id | pubmed-6534536 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-65345362019-06-03 Spin-dependent scattering induced negative magnetoresistance in topological insulator Bi(2)Te(3) nanowires Bhattacharyya, Biplab Singh, Bahadur Aloysius, R. P. Yadav, Reena Su, Chenliang Lin, Hsin Auluck, S. Gupta, Anurag Senguttuvan, T. D. Husale, Sudhir Sci Rep Article Studies of negative magnetoresistance in novel materials have recently been in the forefront of spintronic research. Here, we report an experimental observation of the temperature dependent negative magnetoresistance in Bi(2)Te(3) topological insulator (TI) nanowires at ultralow temperatures (20 mK). We find a crossover from negative to positive magnetoresistance while increasing temperature under longitudinal magnetic field. We observe a large negative magnetoresistance which reaches −22% at 8 T. The interplay between negative and positive magnetoresistance can be understood in terms of the competition between dephasing and spin-orbit scattering time scales. Based on the first-principles calculations within a density functional theory framework, we demonstrate that disorder (substitutional) by Ga(+) ion milling process, which is used to fabricate nanowires, induces local magnetic moments in Bi(2)Te(3) crystal that can lead to spin-dependent scattering of surface and bulk electrons. These experimental findings show a significant advance in the nanoscale spintronics applications based on longitudinal magnetoresistance in TIs. Our experimental results of large negative longitudinal magnetoresistance in 3D TIs further indicate that axial anomaly is a universal phenomenon in generic 3D metals. Nature Publishing Group UK 2019-05-24 /pmc/articles/PMC6534536/ /pubmed/31127174 http://dx.doi.org/10.1038/s41598-019-44265-5 Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Bhattacharyya, Biplab Singh, Bahadur Aloysius, R. P. Yadav, Reena Su, Chenliang Lin, Hsin Auluck, S. Gupta, Anurag Senguttuvan, T. D. Husale, Sudhir Spin-dependent scattering induced negative magnetoresistance in topological insulator Bi(2)Te(3) nanowires |
title | Spin-dependent scattering induced negative magnetoresistance in topological insulator Bi(2)Te(3) nanowires |
title_full | Spin-dependent scattering induced negative magnetoresistance in topological insulator Bi(2)Te(3) nanowires |
title_fullStr | Spin-dependent scattering induced negative magnetoresistance in topological insulator Bi(2)Te(3) nanowires |
title_full_unstemmed | Spin-dependent scattering induced negative magnetoresistance in topological insulator Bi(2)Te(3) nanowires |
title_short | Spin-dependent scattering induced negative magnetoresistance in topological insulator Bi(2)Te(3) nanowires |
title_sort | spin-dependent scattering induced negative magnetoresistance in topological insulator bi(2)te(3) nanowires |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6534536/ https://www.ncbi.nlm.nih.gov/pubmed/31127174 http://dx.doi.org/10.1038/s41598-019-44265-5 |
work_keys_str_mv | AT bhattacharyyabiplab spindependentscatteringinducednegativemagnetoresistanceintopologicalinsulatorbi2te3nanowires AT singhbahadur spindependentscatteringinducednegativemagnetoresistanceintopologicalinsulatorbi2te3nanowires AT aloysiusrp spindependentscatteringinducednegativemagnetoresistanceintopologicalinsulatorbi2te3nanowires AT yadavreena spindependentscatteringinducednegativemagnetoresistanceintopologicalinsulatorbi2te3nanowires AT suchenliang spindependentscatteringinducednegativemagnetoresistanceintopologicalinsulatorbi2te3nanowires AT linhsin spindependentscatteringinducednegativemagnetoresistanceintopologicalinsulatorbi2te3nanowires AT aulucks spindependentscatteringinducednegativemagnetoresistanceintopologicalinsulatorbi2te3nanowires AT guptaanurag spindependentscatteringinducednegativemagnetoresistanceintopologicalinsulatorbi2te3nanowires AT senguttuvantd spindependentscatteringinducednegativemagnetoresistanceintopologicalinsulatorbi2te3nanowires AT husalesudhir spindependentscatteringinducednegativemagnetoresistanceintopologicalinsulatorbi2te3nanowires |