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Composition Dependence of Structural and Electronic Properties of Quaternary InGaNBi

To realize feasible band structure engineering and hence enhanced luminescence efficiency, InGaNBi is an attractive alloy which may be exploited in photonic devices of visible light and mid-infrared. In present study, the structural, electronic properties such as bandgap, spin-orbit splitting energy...

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Autores principales: Liang, Dan, Zhu, Pengfei, Han, Lihong, Zhang, Tao, Li, Yang, Li, Shanjun, Wang, Shumin, Lu, Pengfei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6538720/
https://www.ncbi.nlm.nih.gov/pubmed/31139956
http://dx.doi.org/10.1186/s11671-019-2968-0
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author Liang, Dan
Zhu, Pengfei
Han, Lihong
Zhang, Tao
Li, Yang
Li, Shanjun
Wang, Shumin
Lu, Pengfei
author_facet Liang, Dan
Zhu, Pengfei
Han, Lihong
Zhang, Tao
Li, Yang
Li, Shanjun
Wang, Shumin
Lu, Pengfei
author_sort Liang, Dan
collection PubMed
description To realize feasible band structure engineering and hence enhanced luminescence efficiency, InGaNBi is an attractive alloy which may be exploited in photonic devices of visible light and mid-infrared. In present study, the structural, electronic properties such as bandgap, spin-orbit splitting energy, and substrate strain of InGaNBi versus In and Bi compositions are studied by using first-principles calculations. The lattice parameters increase almost linearly with increasing In and Bi compositions. By bismuth doping, the quaternary InGaNBi bandgap could cover a wide energy range from 3.273 to 0.651 eV for Bi up to 9.375% and In up to 50%, corresponding to the wavelength range from 0.38-1.9 µm. The calculated spin-orbit splitting energy are about 0.220 eV for 3.125%, 0.360 eV for 6.25%, and 0.600 eV for 9.375% Bi, respectively. We have also shown the strain of InGaNBi on GaN; it indicates that through adjusting In and Bi compositions, InGaNBi can be designed on GaN with an acceptable strain.
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spelling pubmed-65387202019-06-21 Composition Dependence of Structural and Electronic Properties of Quaternary InGaNBi Liang, Dan Zhu, Pengfei Han, Lihong Zhang, Tao Li, Yang Li, Shanjun Wang, Shumin Lu, Pengfei Nanoscale Res Lett Nano Express To realize feasible band structure engineering and hence enhanced luminescence efficiency, InGaNBi is an attractive alloy which may be exploited in photonic devices of visible light and mid-infrared. In present study, the structural, electronic properties such as bandgap, spin-orbit splitting energy, and substrate strain of InGaNBi versus In and Bi compositions are studied by using first-principles calculations. The lattice parameters increase almost linearly with increasing In and Bi compositions. By bismuth doping, the quaternary InGaNBi bandgap could cover a wide energy range from 3.273 to 0.651 eV for Bi up to 9.375% and In up to 50%, corresponding to the wavelength range from 0.38-1.9 µm. The calculated spin-orbit splitting energy are about 0.220 eV for 3.125%, 0.360 eV for 6.25%, and 0.600 eV for 9.375% Bi, respectively. We have also shown the strain of InGaNBi on GaN; it indicates that through adjusting In and Bi compositions, InGaNBi can be designed on GaN with an acceptable strain. Springer US 2019-05-28 /pmc/articles/PMC6538720/ /pubmed/31139956 http://dx.doi.org/10.1186/s11671-019-2968-0 Text en © The Author(s) 2019 Open Access This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Liang, Dan
Zhu, Pengfei
Han, Lihong
Zhang, Tao
Li, Yang
Li, Shanjun
Wang, Shumin
Lu, Pengfei
Composition Dependence of Structural and Electronic Properties of Quaternary InGaNBi
title Composition Dependence of Structural and Electronic Properties of Quaternary InGaNBi
title_full Composition Dependence of Structural and Electronic Properties of Quaternary InGaNBi
title_fullStr Composition Dependence of Structural and Electronic Properties of Quaternary InGaNBi
title_full_unstemmed Composition Dependence of Structural and Electronic Properties of Quaternary InGaNBi
title_short Composition Dependence of Structural and Electronic Properties of Quaternary InGaNBi
title_sort composition dependence of structural and electronic properties of quaternary inganbi
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6538720/
https://www.ncbi.nlm.nih.gov/pubmed/31139956
http://dx.doi.org/10.1186/s11671-019-2968-0
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