Instant Mercury Ion Detection in Industrial Waste Water with a Microchip Using Extended Gate Field-Effect Transistors and a Portable Device

Mercury ion selective membrane (Hg-ISM) coated extended gate Field Effect transistors (ISM-FET) were used to manifest a novel methodology for ion-selective sensors based on FET’s, creating ultra-high sensitivity (−36 mV/log [Hg(2+)]) and outweighing ideal Nernst sensitivity limit (−29.58 mV/log [Hg(...

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Detalles Bibliográficos
Autores principales: Sukesan, Revathi, Chen, Yi-Ting, Shahim, Suman, Wang, Shin-Li, Sarangadharan, Indu, Wang, Yu-Lin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6539896/
https://www.ncbi.nlm.nih.gov/pubmed/31086067
http://dx.doi.org/10.3390/s19092209

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6539896/
https://www.ncbi.nlm.nih.gov/pubmed/31086067
http://dx.doi.org/10.3390/s19092209

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