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Instant Mercury Ion Detection in Industrial Waste Water with a Microchip Using Extended Gate Field-Effect Transistors and a Portable Device
Mercury ion selective membrane (Hg-ISM) coated extended gate Field Effect transistors (ISM-FET) were used to manifest a novel methodology for ion-selective sensors based on FET’s, creating ultra-high sensitivity (−36 mV/log [Hg(2+)]) and outweighing ideal Nernst sensitivity limit (−29.58 mV/log [Hg(...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6539896/ https://www.ncbi.nlm.nih.gov/pubmed/31086067 http://dx.doi.org/10.3390/s19092209 |