Characteristic Fluctuations of Dynamic Power Delay Induced by Random Nanosized Titanium Nitride Grains and the Aspect Ratio Effect of Gate-All-Around Nanowire CMOS Devices and Circuits

In this study, we investigate direct current (DC)/alternating current (AC) characteristic variability induced by work function fluctuation (WKF) with respect to different nanosized metal grains and the variation of aspect ratios (ARs) of channel cross-sections on a 10 nm gate gate-all-around (GAA) n...

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Detalles Bibliográficos
Autores principales: Li, Yiming, Chen, Chieh-Yang, Chuang, Min-Hui, Chao, Pei-Jung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6539909/
https://www.ncbi.nlm.nih.gov/pubmed/31071936
http://dx.doi.org/10.3390/ma12091492

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6539909/
https://www.ncbi.nlm.nih.gov/pubmed/31071936
http://dx.doi.org/10.3390/ma12091492

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