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Use of a New Non-Pyrophoric Liquid Aluminum Precursor for Atomic Layer Deposition

An Al(2)O(3) thin film has been grown by vapor deposition using different Al precursors. The most commonly used precursor is trimethylaluminum, which is highly reactive and pyrophoric. In the purpose of searching for a more ideal Al source, the non-pyrophoric aluminum tri-sec-butoxide ([Al(O(s)Bu)(3...

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Detalles Bibliográficos
Autores principales:	Xia, Xueming, Taylor, Alaric, Zhao, Yifan, Guldin, Stefan, Blackman, Chris
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2019
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6540254/ https://www.ncbi.nlm.nih.gov/pubmed/31052512 http://dx.doi.org/10.3390/ma12091429

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