Influence of noise-binding energy interplay on DC-Kerr effect and electro-absorption coefficient of impurity doped quantum dots

Present investigation focuses on analyzing the role of noise-binding energy (BE) interplay on the correction factors (CF) related to Kerr nonlinearity, DC-Kerr effect (DCKE) and electro-absorption coefficient (EAC) of GaAs quantum dot (QD) contaminated with impurity under the active presence of Gaussian white noise. The dopant impurity is modeled by a Gaussian potential. The noise-BE interplay does not give rise to any new interesting feature in case of CF from that in absence of noise. However, the said interplay prominently influences the DCKE and EAC profiles. This is justified by the emergence of distinct qualitative characteristics in the DCKE and EAC profiles that evidently depend on the mode of introduction of noise.