High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiN(x) Passivation Layer

In this study, we proposed and experimentally demonstrated a high breakdown voltage (BV) and low dynamic ON-resistance (R(ON, D)) AlGaN/GaN high electron mobility transistor (HEMT) by implanting fluorine ions in the thick SiN(x) passivation layer between the gate and drain electrodes. Instead of the...

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Detalles Bibliográficos
Autores principales: Yang, Chao, Luo, Xiaorong, Sun, Tao, Zhang, Anbang, Ouyang, Dongfa, Deng, Siyu, Wei, Jie, Zhang, Bo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6548790/
https://www.ncbi.nlm.nih.gov/pubmed/31165332
http://dx.doi.org/10.1186/s11671-019-3025-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6548790/
https://www.ncbi.nlm.nih.gov/pubmed/31165332
http://dx.doi.org/10.1186/s11671-019-3025-8

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