Cargando…

Epitaxy of III-Nitrides on β-Ga(2)O(3) and Its Vertical Structure LEDs

β-Ga(2)O(3), characterized with high n-type conductivity, little lattice mismatch with III-Nitrides, high transparency (>80%) in blue, and UVA (400–320 nm) as well as UVB (320–280 nm) regions, has great potential as the substrate for vertical structure blue and especially ultra violet LEDs (light...

Descripción completa

Detalles Bibliográficos
Autores principales:	Li, Weijiang, Zhang, Xiang, Meng, Ruilin, Yan, Jianchang, Wang, Junxi, Li, Jinmin, Wei, Tongbo
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2019
Materias:	Review
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6562507/ https://www.ncbi.nlm.nih.gov/pubmed/31086010 http://dx.doi.org/10.3390/mi10050322

Ejemplares similares

Direct Growth of AlGaN Nanorod LEDs on Graphene-Covered Si
por: Ren, Fang, et al.
Publicado: (2018)

Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS(2)
por: Yin, Yue, et al.
Publicado: (2018)

Van der Waals epitaxy of nearly single-crystalline nitride films on amorphous graphene-glass wafer
por: Ren, Fang, et al.
Publicado: (2021)

Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxy
por: Wei, Tongbo, et al.
Publicado: (2016)

Crystallographic orientation control and optical properties of GaN nanowires
por: Wu, Shaoteng, et al.
Publicado: (2018)

Van der Waals Epitaxy of III-Nitrides and Its Applications
por: Chen, Qi, et al.
Publicado: (2020)

Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode
por: Chang, Hongliang, et al.
Publicado: (2022)

Epitaxial growth of III-nitride compounds: computational approach
por: Matsuoka, Takashi, et al.
Publicado: (2018)

The stability of graphene and boron nitride for III-nitride epitaxy and post-growth exfoliation
por: Park, Jeong-Hwan, et al.
Publicado: (2021)

Author Correction: Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode
por: Chang, Hongliang, et al.
Publicado: (2022)

Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation
por: Wei, Tongbo, et al.
Publicado: (2009)

Quasi‐2D Growth of Aluminum Nitride Film on Graphene for Boosting Deep Ultraviolet Light‐Emitting Diodes
por: Chang, Hongliang, et al.
Publicado: (2020)

N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation
por: Su, Zhaole, et al.
Publicado: (2022)

Determination of the preferred epitaxy for III-nitride semiconductors on wet-transferred graphene
por: Liu, Fang, et al.
Publicado: (2023)

Lattice modulation strategies for 2D material assisted epitaxial growth
por: Chen, Qi, et al.
Publicado: (2023)

Characteristics of Vertical Ga(2)O(3) Schottky Junctions with the Interfacial Hexagonal Boron Nitride Film
por: Rama, Venkata Krishna Rao, et al.
Publicado: (2022)

Plasma Nitridation Effect on β-Ga(2)O(3) Semiconductors
por: Kim, Sunjae, et al.
Publicado: (2023)

Normally-off β-Ga(2)O(3) MOSFET with an Epitaxial Drift Layer
por: Jang, Chan-Hee, et al.
Publicado: (2022)

Epitaxial Growth of (−201) β-Ga(2)O(3) on (001) Diamond Substrates
por: Nandi, Arpit, et al.
Publicado: (2023)

Various Quantum- and Nano-Structures by III–V Droplet Epitaxy on GaAs Substrates
por: Lee, JH, et al.
Publicado: (2009)

Dual-wavelength visible photodetector based on vertical (In,Ga)N nanowires grown by molecular beam epitaxy
por: Zhang, Jianya, et al.
Publicado: (2021)

Epitaxial Growth of β-Ga(2)O(3) Thin Films on Si with YSZ Buffer Layer
por: Choi, Hyung-Jin, et al.
Publicado: (2022)

Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates
por: Sorokin, Sergey V., et al.
Publicado: (2020)

High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga(2)O(3) using a GaN buffer layer
por: Muhammed, M. M., et al.
Publicado: (2016)

The X-ray response of epitaxial GaAs
por: Owens, A, et al.
Publicado: (1998)

Formation of Ga droplets on patterned GaAs (100) by molecular beam epitaxy
por: Li, Ming-Yu, et al.
Publicado: (2012)

Numerical simulation analysis of carbon defects in the buffer on vertical leakage and breakdown of GaN on silicon epitaxial layers
por: Cao, Weicheng, et al.
Publicado: (2023)

P-type Inversion at the Surface of β-Ga(2)O(3) Epitaxial Layer Modified with Au Nanoparticles
por: Krawczyk, Maciej, et al.
Publicado: (2022)

Challenges and Advancement of Blue III-Nitride Vertical-Cavity Surface-Emitting Lasers
por: Huang, Chia-Yen, et al.
Publicado: (2021)

Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition
por: Schilirò, Emanuela, et al.
Publicado: (2021)

Toward Large-Scale Ga(2)O(3) Membranes via Quasi-Van Der Waals Epitaxy on Epitaxial Graphene Layers
por: Min, Jung-Hong, et al.
Publicado: (2021)

Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy
por: Gu, Ying, et al.
Publicado: (2023)

Direct band-gap crossover in epitaxial monolayer boron nitride
por: Elias, C., et al.
Publicado: (2019)

Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides
por: Liu, Zhiqiang, et al.
Publicado: (2016)

Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing
por: Makhloufi, Hajer, et al.
Publicado: (2014)

Simple Approach to Mitigate the Emission Wavelength Instability of III-Nitride μLED Arrays
por: Martinez de Arriba, Guillem, et al.
Publicado: (2022)

Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
por: Shih, Huan-Yu, et al.
Publicado: (2015)

Novel thin-GaN LED structure adopted micro abraded surface to compare with conventional vertical LEDs in ultraviolet light
por: Chiang, Yen Chih, et al.
Publicado: (2015)

Van der Waals epitaxy and characterization of hexagonal boron nitride nanosheets on graphene
por: Song, Yangxi, et al.
Publicado: (2014)

Realization of vertical metal semiconductor heterostructures via solution phase epitaxy
por: Wang, Xiaoshan, et al.
Publicado: (2018)

Cannot write session to /tmp/vufind_sessions/sess_dk40a2h8msq3lojplad05ns5d1