Tuning Electronic Properties of the SiC-GeC Bilayer by External Electric Field: A First-Principles Study

First-principles calculations were used to investigate the electronic properties of the SiC/GeC nanosheet (the thickness was about 8 Å). With no electric field (E-field), the SiC/GeC nanosheet was shown to have a direct bandgap of 1.90 eV. In the band structure, the valence band of the SiC/GeC nanos...

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Detalles Bibliográficos
Autores principales: Luo, Min, Yu, Bin, Xu, Yu-e
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6562555/
https://www.ncbi.nlm.nih.gov/pubmed/31071940
http://dx.doi.org/10.3390/mi10050309

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6562555/
https://www.ncbi.nlm.nih.gov/pubmed/31071940
http://dx.doi.org/10.3390/mi10050309

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