Cargando…
Tuning Electronic Properties of the SiC-GeC Bilayer by External Electric Field: A First-Principles Study
First-principles calculations were used to investigate the electronic properties of the SiC/GeC nanosheet (the thickness was about 8 Å). With no electric field (E-field), the SiC/GeC nanosheet was shown to have a direct bandgap of 1.90 eV. In the band structure, the valence band of the SiC/GeC nanos...
| Autores principales: | , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2019
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6562555/ https://www.ncbi.nlm.nih.gov/pubmed/31071940 http://dx.doi.org/10.3390/mi10050309 |