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Triple nitrogen-vacancy centre fabrication by C(5)N(4)H(n) ion implantation

Quantum information processing requires quantum registers based on coherently interacting quantum bits. The dipolar couplings between nitrogen vacancy (NV) centres with nanometre separation makes them a potential platform for room-temperature quantum registers. The fabrication of quantum registers t...

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Autores principales: Haruyama, Moriyoshi, Onoda, Shinobu, Higuchi, Taisei, Kada, Wataru, Chiba, Atsuya, Hirano, Yoshimi, Teraji, Tokuyuki, Igarashi, Ryuji, Kawai, Sora, Kawarada, Hiroshi, Ishii, Yu, Fukuda, Ryosuke, Tanii, Takashi, Isoya, Junichi, Ohshima, Takeshi, Hanaizumi, Osamu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6565727/
https://www.ncbi.nlm.nih.gov/pubmed/31197143
http://dx.doi.org/10.1038/s41467-019-10529-x
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author Haruyama, Moriyoshi
Onoda, Shinobu
Higuchi, Taisei
Kada, Wataru
Chiba, Atsuya
Hirano, Yoshimi
Teraji, Tokuyuki
Igarashi, Ryuji
Kawai, Sora
Kawarada, Hiroshi
Ishii, Yu
Fukuda, Ryosuke
Tanii, Takashi
Isoya, Junichi
Ohshima, Takeshi
Hanaizumi, Osamu
author_facet Haruyama, Moriyoshi
Onoda, Shinobu
Higuchi, Taisei
Kada, Wataru
Chiba, Atsuya
Hirano, Yoshimi
Teraji, Tokuyuki
Igarashi, Ryuji
Kawai, Sora
Kawarada, Hiroshi
Ishii, Yu
Fukuda, Ryosuke
Tanii, Takashi
Isoya, Junichi
Ohshima, Takeshi
Hanaizumi, Osamu
author_sort Haruyama, Moriyoshi
collection PubMed
description Quantum information processing requires quantum registers based on coherently interacting quantum bits. The dipolar couplings between nitrogen vacancy (NV) centres with nanometre separation makes them a potential platform for room-temperature quantum registers. The fabrication of quantum registers that consist of NV centre arrays has not advanced beyond NV pairs for several years. Further scaling up of coupled NV centres by using nitrogen implantation through nanoholes has been hampered because the shortening of the separation distance is limited by the nanohole size and ion straggling. Here, we demonstrate the implantation of C(5)N(4)H(n) from an adenine ion source to achieve further scaling. Because the C(5)N(4)H(n) ion may be regarded as an ideal point source, the separation distance is solely determined by straggling. We successfully demonstrate the fabrication of strongly coupled triple NV centres. Our method may be extended to fabricate small quantum registers that can perform quantum information processing at room temperature.
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spelling pubmed-65657272019-06-21 Triple nitrogen-vacancy centre fabrication by C(5)N(4)H(n) ion implantation Haruyama, Moriyoshi Onoda, Shinobu Higuchi, Taisei Kada, Wataru Chiba, Atsuya Hirano, Yoshimi Teraji, Tokuyuki Igarashi, Ryuji Kawai, Sora Kawarada, Hiroshi Ishii, Yu Fukuda, Ryosuke Tanii, Takashi Isoya, Junichi Ohshima, Takeshi Hanaizumi, Osamu Nat Commun Article Quantum information processing requires quantum registers based on coherently interacting quantum bits. The dipolar couplings between nitrogen vacancy (NV) centres with nanometre separation makes them a potential platform for room-temperature quantum registers. The fabrication of quantum registers that consist of NV centre arrays has not advanced beyond NV pairs for several years. Further scaling up of coupled NV centres by using nitrogen implantation through nanoholes has been hampered because the shortening of the separation distance is limited by the nanohole size and ion straggling. Here, we demonstrate the implantation of C(5)N(4)H(n) from an adenine ion source to achieve further scaling. Because the C(5)N(4)H(n) ion may be regarded as an ideal point source, the separation distance is solely determined by straggling. We successfully demonstrate the fabrication of strongly coupled triple NV centres. Our method may be extended to fabricate small quantum registers that can perform quantum information processing at room temperature. Nature Publishing Group UK 2019-06-13 /pmc/articles/PMC6565727/ /pubmed/31197143 http://dx.doi.org/10.1038/s41467-019-10529-x Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Haruyama, Moriyoshi
Onoda, Shinobu
Higuchi, Taisei
Kada, Wataru
Chiba, Atsuya
Hirano, Yoshimi
Teraji, Tokuyuki
Igarashi, Ryuji
Kawai, Sora
Kawarada, Hiroshi
Ishii, Yu
Fukuda, Ryosuke
Tanii, Takashi
Isoya, Junichi
Ohshima, Takeshi
Hanaizumi, Osamu
Triple nitrogen-vacancy centre fabrication by C(5)N(4)H(n) ion implantation
title Triple nitrogen-vacancy centre fabrication by C(5)N(4)H(n) ion implantation
title_full Triple nitrogen-vacancy centre fabrication by C(5)N(4)H(n) ion implantation
title_fullStr Triple nitrogen-vacancy centre fabrication by C(5)N(4)H(n) ion implantation
title_full_unstemmed Triple nitrogen-vacancy centre fabrication by C(5)N(4)H(n) ion implantation
title_short Triple nitrogen-vacancy centre fabrication by C(5)N(4)H(n) ion implantation
title_sort triple nitrogen-vacancy centre fabrication by c(5)n(4)h(n) ion implantation
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6565727/
https://www.ncbi.nlm.nih.gov/pubmed/31197143
http://dx.doi.org/10.1038/s41467-019-10529-x
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