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Optimization of MBE Growth Conditions of In(0.52)Al(0.48)As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers

We investigate molecular beam epitaxy (MBE) growth conditions of micrometers-thick In(0.52)Al(0.48)As designed for waveguide of InGaAs/InAlAs/InP quantum cascade lasers. The effects of growth temperature and V/III ratio on the surface morphology and defect structure were studied. The growth conditio...

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Autores principales: Gutowski, Piotr, Sankowska, Iwona, Słupiński, Tomasz, Pierścińska, Dorota, Pierściński, Kamil, Kuźmicz, Aleksandr, Gołaszewska-Malec, Krystyna, Bugajski, Maciej
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6566529/
https://www.ncbi.nlm.nih.gov/pubmed/31108890
http://dx.doi.org/10.3390/ma12101621
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author Gutowski, Piotr
Sankowska, Iwona
Słupiński, Tomasz
Pierścińska, Dorota
Pierściński, Kamil
Kuźmicz, Aleksandr
Gołaszewska-Malec, Krystyna
Bugajski, Maciej
author_facet Gutowski, Piotr
Sankowska, Iwona
Słupiński, Tomasz
Pierścińska, Dorota
Pierściński, Kamil
Kuźmicz, Aleksandr
Gołaszewska-Malec, Krystyna
Bugajski, Maciej
author_sort Gutowski, Piotr
collection PubMed
description We investigate molecular beam epitaxy (MBE) growth conditions of micrometers-thick In(0.52)Al(0.48)As designed for waveguide of InGaAs/InAlAs/InP quantum cascade lasers. The effects of growth temperature and V/III ratio on the surface morphology and defect structure were studied. The growth conditions which were developed for the growth of cascaded In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As active region, e.g., growth temperature of T(g) = 520 °C and V/III ratio of 12, turned out to be not optimum for the growth of thick In(0.52)Al(0.48)As waveguide layers. It has been observed that, after exceeding ~1 µm thickness, the quality of In(0.52)Al(0.48)As layers deteriorates. The in-situ optical reflectometry showed increasing surface roughness caused by defect forming, which was further confirmed by high resolution X-ray reciprocal space mapping, optical microscopy and atomic force microscopy. The presented optimization of growth conditions of In(0.52)Al(0.48)As waveguide layer led to the growth of defect free material, with good optical quality. This has been achieved by decreasing the growth temperature to T(g) = 480 °C with appropriate increasing V/III ratio. At the same time, the growth conditions of the cascade active region of the laser were left unchanged. The lasers grown using new recipes have shown lower threshold currents and improved slope efficiency. We relate this performance improvement to reduction of the electron scattering on the interface roughness and decreased waveguide absorption losses.
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spelling pubmed-65665292019-06-17 Optimization of MBE Growth Conditions of In(0.52)Al(0.48)As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers Gutowski, Piotr Sankowska, Iwona Słupiński, Tomasz Pierścińska, Dorota Pierściński, Kamil Kuźmicz, Aleksandr Gołaszewska-Malec, Krystyna Bugajski, Maciej Materials (Basel) Article We investigate molecular beam epitaxy (MBE) growth conditions of micrometers-thick In(0.52)Al(0.48)As designed for waveguide of InGaAs/InAlAs/InP quantum cascade lasers. The effects of growth temperature and V/III ratio on the surface morphology and defect structure were studied. The growth conditions which were developed for the growth of cascaded In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As active region, e.g., growth temperature of T(g) = 520 °C and V/III ratio of 12, turned out to be not optimum for the growth of thick In(0.52)Al(0.48)As waveguide layers. It has been observed that, after exceeding ~1 µm thickness, the quality of In(0.52)Al(0.48)As layers deteriorates. The in-situ optical reflectometry showed increasing surface roughness caused by defect forming, which was further confirmed by high resolution X-ray reciprocal space mapping, optical microscopy and atomic force microscopy. The presented optimization of growth conditions of In(0.52)Al(0.48)As waveguide layer led to the growth of defect free material, with good optical quality. This has been achieved by decreasing the growth temperature to T(g) = 480 °C with appropriate increasing V/III ratio. At the same time, the growth conditions of the cascade active region of the laser were left unchanged. The lasers grown using new recipes have shown lower threshold currents and improved slope efficiency. We relate this performance improvement to reduction of the electron scattering on the interface roughness and decreased waveguide absorption losses. MDPI 2019-05-17 /pmc/articles/PMC6566529/ /pubmed/31108890 http://dx.doi.org/10.3390/ma12101621 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Gutowski, Piotr
Sankowska, Iwona
Słupiński, Tomasz
Pierścińska, Dorota
Pierściński, Kamil
Kuźmicz, Aleksandr
Gołaszewska-Malec, Krystyna
Bugajski, Maciej
Optimization of MBE Growth Conditions of In(0.52)Al(0.48)As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers
title Optimization of MBE Growth Conditions of In(0.52)Al(0.48)As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers
title_full Optimization of MBE Growth Conditions of In(0.52)Al(0.48)As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers
title_fullStr Optimization of MBE Growth Conditions of In(0.52)Al(0.48)As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers
title_full_unstemmed Optimization of MBE Growth Conditions of In(0.52)Al(0.48)As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers
title_short Optimization of MBE Growth Conditions of In(0.52)Al(0.48)As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers
title_sort optimization of mbe growth conditions of in(0.52)al(0.48)as waveguide layers for ingaas/inalas/inp quantum cascade lasers
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6566529/
https://www.ncbi.nlm.nih.gov/pubmed/31108890
http://dx.doi.org/10.3390/ma12101621
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