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Optimization of MBE Growth Conditions of In(0.52)Al(0.48)As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers

We investigate molecular beam epitaxy (MBE) growth conditions of micrometers-thick In(0.52)Al(0.48)As designed for waveguide of InGaAs/InAlAs/InP quantum cascade lasers. The effects of growth temperature and V/III ratio on the surface morphology and defect structure were studied. The growth conditio...

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Detalles Bibliográficos
Autores principales:	Gutowski, Piotr, Sankowska, Iwona, Słupiński, Tomasz, Pierścińska, Dorota, Pierściński, Kamil, Kuźmicz, Aleksandr, Gołaszewska-Malec, Krystyna, Bugajski, Maciej
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2019
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6566529/ https://www.ncbi.nlm.nih.gov/pubmed/31108890 http://dx.doi.org/10.3390/ma12101621

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