Probing the Optical Properties of MoS(2) on SiO(2)/Si and Sapphire Substrates

As an important supplementary material to graphene in the optoelectronics field, molybdenum disulfide (MoS(2)) has attracted attention from researchers due to its good light absorption capacity and adjustable bandgap. In this paper, MoS(2) layers are respectively grown on SiO(2)/Si and sapphire substrates by atmospheric pressure chemical vapor deposition (APCVD). Atomic force microscopy, optical microscopy, and Raman and photoluminescence spectroscopy are used to probe the optical properties of MoS(2) on SiO(2)/Si and sapphire substrates systematically. The peak shift between the characteristic A(1g) and E(1)(2g) peaks increases, and the I peak of the PL spectrum on the SiO(2)/Si substrate redshifts slightly when the layer numbers were increased, which can help in obtaining the layer number and peak position of MoS(2). Moreover, the difference from monolayer MoS(2) on the SiO(2)/Si substrate is that the B peak of the PL spectrum has a blueshift of 56 meV and the characteristic E(1)(2g) peak of the Raman spectrum has no blueshift. The 1- and 2-layer MoS(2) on a sapphire substrate had a higher PL peak intensity than that of the SiO(2)/Si substrate. When the laser wavelength is transformed from 532 to 633 nm, the position of I exciton peak has a blueshift of 16 meV, and the PL intensity of monolayer MoS(2) on the SiO(2)/Si substrate increases. The optical properties of MoS(2) can be obtained, which is helpful for the fabrication of optoelectronic devices.