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400 °C Sensor Based on Ni/4H-SiC Schottky Diode for Reliable Temperature Monitoring in Industrial Environments
This paper presents a high-temperature probe suitable for operating in harsh industrial applications as a reliable alternative to low-lifespan conventional solutions, such as thermocouples. The temperature sensing element is a Schottky diode fabricated on 4H-SiC wafers, with Ni as the Schottky metal...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6567275/ https://www.ncbi.nlm.nih.gov/pubmed/31137664 http://dx.doi.org/10.3390/s19102384 |
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author | Draghici, Florin Brezeanu, Gheorghe Pristavu, Gheorghe Pascu, Razvan Badila, Marian Pribeanu, Adriana Ceuca, Emilian |
author_facet | Draghici, Florin Brezeanu, Gheorghe Pristavu, Gheorghe Pascu, Razvan Badila, Marian Pribeanu, Adriana Ceuca, Emilian |
author_sort | Draghici, Florin |
collection | PubMed |
description | This paper presents a high-temperature probe suitable for operating in harsh industrial applications as a reliable alternative to low-lifespan conventional solutions, such as thermocouples. The temperature sensing element is a Schottky diode fabricated on 4H-SiC wafers, with Ni as the Schottky metal, which allows operation at temperatures up to 400 °C, with sensitivities over 2 mV/°C and excellent linearity (R(2) > 99.99%). The temperature probe also includes dedicated circuitry for signal acquisition and conversion to the 4 mA–20 mA industrial standard output signal. This read-out circuit can be calibrated for linear response over a tunable temperature detection range. The entire system is designed for full electrical and mechanical compatibility with existing conventional probe casings, allowing for seamless implementation in a factory’s sensor network. Such sensors are tested alongside standard thermocouples, with matching temperature monitoring results, over several months, in real working conditions (a cement factory), up to 400 °C. |
format | Online Article Text |
id | pubmed-6567275 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-65672752019-06-17 400 °C Sensor Based on Ni/4H-SiC Schottky Diode for Reliable Temperature Monitoring in Industrial Environments Draghici, Florin Brezeanu, Gheorghe Pristavu, Gheorghe Pascu, Razvan Badila, Marian Pribeanu, Adriana Ceuca, Emilian Sensors (Basel) Article This paper presents a high-temperature probe suitable for operating in harsh industrial applications as a reliable alternative to low-lifespan conventional solutions, such as thermocouples. The temperature sensing element is a Schottky diode fabricated on 4H-SiC wafers, with Ni as the Schottky metal, which allows operation at temperatures up to 400 °C, with sensitivities over 2 mV/°C and excellent linearity (R(2) > 99.99%). The temperature probe also includes dedicated circuitry for signal acquisition and conversion to the 4 mA–20 mA industrial standard output signal. This read-out circuit can be calibrated for linear response over a tunable temperature detection range. The entire system is designed for full electrical and mechanical compatibility with existing conventional probe casings, allowing for seamless implementation in a factory’s sensor network. Such sensors are tested alongside standard thermocouples, with matching temperature monitoring results, over several months, in real working conditions (a cement factory), up to 400 °C. MDPI 2019-05-24 /pmc/articles/PMC6567275/ /pubmed/31137664 http://dx.doi.org/10.3390/s19102384 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Draghici, Florin Brezeanu, Gheorghe Pristavu, Gheorghe Pascu, Razvan Badila, Marian Pribeanu, Adriana Ceuca, Emilian 400 °C Sensor Based on Ni/4H-SiC Schottky Diode for Reliable Temperature Monitoring in Industrial Environments |
title | 400 °C Sensor Based on Ni/4H-SiC Schottky Diode for Reliable Temperature Monitoring in Industrial Environments |
title_full | 400 °C Sensor Based on Ni/4H-SiC Schottky Diode for Reliable Temperature Monitoring in Industrial Environments |
title_fullStr | 400 °C Sensor Based on Ni/4H-SiC Schottky Diode for Reliable Temperature Monitoring in Industrial Environments |
title_full_unstemmed | 400 °C Sensor Based on Ni/4H-SiC Schottky Diode for Reliable Temperature Monitoring in Industrial Environments |
title_short | 400 °C Sensor Based on Ni/4H-SiC Schottky Diode for Reliable Temperature Monitoring in Industrial Environments |
title_sort | 400 °c sensor based on ni/4h-sic schottky diode for reliable temperature monitoring in industrial environments |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6567275/ https://www.ncbi.nlm.nih.gov/pubmed/31137664 http://dx.doi.org/10.3390/s19102384 |
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