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400 °C Sensor Based on Ni/4H-SiC Schottky Diode for Reliable Temperature Monitoring in Industrial Environments

This paper presents a high-temperature probe suitable for operating in harsh industrial applications as a reliable alternative to low-lifespan conventional solutions, such as thermocouples. The temperature sensing element is a Schottky diode fabricated on 4H-SiC wafers, with Ni as the Schottky metal...

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Detalles Bibliográficos
Autores principales: Draghici, Florin, Brezeanu, Gheorghe, Pristavu, Gheorghe, Pascu, Razvan, Badila, Marian, Pribeanu, Adriana, Ceuca, Emilian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6567275/
https://www.ncbi.nlm.nih.gov/pubmed/31137664
http://dx.doi.org/10.3390/s19102384
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author Draghici, Florin
Brezeanu, Gheorghe
Pristavu, Gheorghe
Pascu, Razvan
Badila, Marian
Pribeanu, Adriana
Ceuca, Emilian
author_facet Draghici, Florin
Brezeanu, Gheorghe
Pristavu, Gheorghe
Pascu, Razvan
Badila, Marian
Pribeanu, Adriana
Ceuca, Emilian
author_sort Draghici, Florin
collection PubMed
description This paper presents a high-temperature probe suitable for operating in harsh industrial applications as a reliable alternative to low-lifespan conventional solutions, such as thermocouples. The temperature sensing element is a Schottky diode fabricated on 4H-SiC wafers, with Ni as the Schottky metal, which allows operation at temperatures up to 400 °C, with sensitivities over 2 mV/°C and excellent linearity (R(2) > 99.99%). The temperature probe also includes dedicated circuitry for signal acquisition and conversion to the 4 mA–20 mA industrial standard output signal. This read-out circuit can be calibrated for linear response over a tunable temperature detection range. The entire system is designed for full electrical and mechanical compatibility with existing conventional probe casings, allowing for seamless implementation in a factory’s sensor network. Such sensors are tested alongside standard thermocouples, with matching temperature monitoring results, over several months, in real working conditions (a cement factory), up to 400 °C.
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spelling pubmed-65672752019-06-17 400 °C Sensor Based on Ni/4H-SiC Schottky Diode for Reliable Temperature Monitoring in Industrial Environments Draghici, Florin Brezeanu, Gheorghe Pristavu, Gheorghe Pascu, Razvan Badila, Marian Pribeanu, Adriana Ceuca, Emilian Sensors (Basel) Article This paper presents a high-temperature probe suitable for operating in harsh industrial applications as a reliable alternative to low-lifespan conventional solutions, such as thermocouples. The temperature sensing element is a Schottky diode fabricated on 4H-SiC wafers, with Ni as the Schottky metal, which allows operation at temperatures up to 400 °C, with sensitivities over 2 mV/°C and excellent linearity (R(2) > 99.99%). The temperature probe also includes dedicated circuitry for signal acquisition and conversion to the 4 mA–20 mA industrial standard output signal. This read-out circuit can be calibrated for linear response over a tunable temperature detection range. The entire system is designed for full electrical and mechanical compatibility with existing conventional probe casings, allowing for seamless implementation in a factory’s sensor network. Such sensors are tested alongside standard thermocouples, with matching temperature monitoring results, over several months, in real working conditions (a cement factory), up to 400 °C. MDPI 2019-05-24 /pmc/articles/PMC6567275/ /pubmed/31137664 http://dx.doi.org/10.3390/s19102384 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Draghici, Florin
Brezeanu, Gheorghe
Pristavu, Gheorghe
Pascu, Razvan
Badila, Marian
Pribeanu, Adriana
Ceuca, Emilian
400 °C Sensor Based on Ni/4H-SiC Schottky Diode for Reliable Temperature Monitoring in Industrial Environments
title 400 °C Sensor Based on Ni/4H-SiC Schottky Diode for Reliable Temperature Monitoring in Industrial Environments
title_full 400 °C Sensor Based on Ni/4H-SiC Schottky Diode for Reliable Temperature Monitoring in Industrial Environments
title_fullStr 400 °C Sensor Based on Ni/4H-SiC Schottky Diode for Reliable Temperature Monitoring in Industrial Environments
title_full_unstemmed 400 °C Sensor Based on Ni/4H-SiC Schottky Diode for Reliable Temperature Monitoring in Industrial Environments
title_short 400 °C Sensor Based on Ni/4H-SiC Schottky Diode for Reliable Temperature Monitoring in Industrial Environments
title_sort 400 °c sensor based on ni/4h-sic schottky diode for reliable temperature monitoring in industrial environments
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6567275/
https://www.ncbi.nlm.nih.gov/pubmed/31137664
http://dx.doi.org/10.3390/s19102384
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