Electrical Properties and Interfacial Issues of HfO(2)/Ge MIS Capacitors Characterized by the Thickness of La(2)O(3) Interlayer

Effects of the La(2)O(3) passivation layer thickness on the interfacial properties of high-k/Ge interface are investigated systematically. In a very thin range (0~15 cycles), the increase of La(2)O(3) passivation layer deposition cycles improves the surface smoothness of HfO(2)/Ge structures. The ca...

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Detalles Bibliográficos
Autores principales: Zhao, Lu, Liu, Hongxia, Wang, Xing, Wang, Yongte, Wang, Shulong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Letter
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6567279/
https://www.ncbi.nlm.nih.gov/pubmed/31060261
http://dx.doi.org/10.3390/nano9050697
Descripción
Sumario:Effects of the La(2)O(3) passivation layer thickness on the interfacial properties of high-k/Ge interface are investigated systematically. In a very thin range (0~15 cycles), the increase of La(2)O(3) passivation layer deposition cycles improves the surface smoothness of HfO(2)/Ge structures. The capacitance-voltage (C-V) characteristics show that the thickness of La(2)O(3) passivation layer can affect the shift of flat band voltage (V(FB)), hysteretic behaviors, and the shapes of the dual-swept C-V curves. Moreover, significant improvements in the gate leakage current and breakdown characteristics are also achieved with the increase of La(2)O(3) interlayer thickness.

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