Electrical Properties and Interfacial Issues of HfO(2)/Ge MIS Capacitors Characterized by the Thickness of La(2)O(3) Interlayer

Effects of the La(2)O(3) passivation layer thickness on the interfacial properties of high-k/Ge interface are investigated systematically. In a very thin range (0~15 cycles), the increase of La(2)O(3) passivation layer deposition cycles improves the surface smoothness of HfO(2)/Ge structures. The ca...

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Detalles Bibliográficos
Autores principales: Zhao, Lu, Liu, Hongxia, Wang, Xing, Wang, Yongte, Wang, Shulong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Letter
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6567279/
https://www.ncbi.nlm.nih.gov/pubmed/31060261
http://dx.doi.org/10.3390/nano9050697
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author Zhao, Lu
Liu, Hongxia
Wang, Xing
Wang, Yongte
Wang, Shulong
author_facet Zhao, Lu
Liu, Hongxia
Wang, Xing
Wang, Yongte
Wang, Shulong
author_sort Zhao, Lu
collection PubMed
description Effects of the La(2)O(3) passivation layer thickness on the interfacial properties of high-k/Ge interface are investigated systematically. In a very thin range (0~15 cycles), the increase of La(2)O(3) passivation layer deposition cycles improves the surface smoothness of HfO(2)/Ge structures. The capacitance-voltage (C-V) characteristics show that the thickness of La(2)O(3) passivation layer can affect the shift of flat band voltage (V(FB)), hysteretic behaviors, and the shapes of the dual-swept C-V curves. Moreover, significant improvements in the gate leakage current and breakdown characteristics are also achieved with the increase of La(2)O(3) interlayer thickness.
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spelling pubmed-65672792019-06-17 Electrical Properties and Interfacial Issues of HfO(2)/Ge MIS Capacitors Characterized by the Thickness of La(2)O(3) Interlayer Zhao, Lu Liu, Hongxia Wang, Xing Wang, Yongte Wang, Shulong Nanomaterials (Basel) Letter Effects of the La(2)O(3) passivation layer thickness on the interfacial properties of high-k/Ge interface are investigated systematically. In a very thin range (0~15 cycles), the increase of La(2)O(3) passivation layer deposition cycles improves the surface smoothness of HfO(2)/Ge structures. The capacitance-voltage (C-V) characteristics show that the thickness of La(2)O(3) passivation layer can affect the shift of flat band voltage (V(FB)), hysteretic behaviors, and the shapes of the dual-swept C-V curves. Moreover, significant improvements in the gate leakage current and breakdown characteristics are also achieved with the increase of La(2)O(3) interlayer thickness. MDPI 2019-05-04 /pmc/articles/PMC6567279/ /pubmed/31060261 http://dx.doi.org/10.3390/nano9050697 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Letter
Zhao, Lu
Liu, Hongxia
Wang, Xing
Wang, Yongte
Wang, Shulong
Electrical Properties and Interfacial Issues of HfO(2)/Ge MIS Capacitors Characterized by the Thickness of La(2)O(3) Interlayer
title Electrical Properties and Interfacial Issues of HfO(2)/Ge MIS Capacitors Characterized by the Thickness of La(2)O(3) Interlayer
title_full Electrical Properties and Interfacial Issues of HfO(2)/Ge MIS Capacitors Characterized by the Thickness of La(2)O(3) Interlayer
title_fullStr Electrical Properties and Interfacial Issues of HfO(2)/Ge MIS Capacitors Characterized by the Thickness of La(2)O(3) Interlayer
title_full_unstemmed Electrical Properties and Interfacial Issues of HfO(2)/Ge MIS Capacitors Characterized by the Thickness of La(2)O(3) Interlayer
title_short Electrical Properties and Interfacial Issues of HfO(2)/Ge MIS Capacitors Characterized by the Thickness of La(2)O(3) Interlayer
title_sort electrical properties and interfacial issues of hfo(2)/ge mis capacitors characterized by the thickness of la(2)o(3) interlayer
topic Letter
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6567279/
https://www.ncbi.nlm.nih.gov/pubmed/31060261
http://dx.doi.org/10.3390/nano9050697
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